No. |
Part Name |
Description |
Manufacturer |
61 |
F100142 |
-4.2 V to -5.7 V, 4 x 4-bit content addressable memory |
National Semiconductor |
62 |
F100150 |
-4.2 V to -5.7 V, hex D latch |
National Semiconductor |
63 |
F100151 |
-4.2 V to -5.7 V, hex D flip-flop |
National Semiconductor |
64 |
F100155 |
-4.2 V to -5.7 V, quad multiplexer latch |
National Semiconductor |
65 |
F100156 |
-4.2 V to -5.7 V, mask-merge/latch |
National Semiconductor |
66 |
F100158 |
-4.2 V to -5.7 V, 8-bit matrix |
National Semiconductor |
67 |
F100160 |
-4.2 V to -5.7 V, dual parity checker/generator |
National Semiconductor |
68 |
F100163 |
-4.2 V to -5.7 V, dual 8-input multiplexer |
National Semiconductor |
69 |
F100164 |
-4.2 V to -5.7 V, 16-input multiplexer |
National Semiconductor |
70 |
F100165 |
-4.2 V to -5.7 V, universal priority encoder |
National Semiconductor |
71 |
F100166 |
-4.2 V to -5.7 V, 9-bit comparator |
National Semiconductor |
72 |
F100170 |
-4.2 V to -5.7 V, universal demultiplexer/decoder |
National Semiconductor |
73 |
F100171 |
-4.2 V to -5.7 V, triple 4-input multiplexer with enable |
National Semiconductor |
74 |
F100175 |
-4.68 V to -5.72 V, quint latch 100k in/10k out |
National Semiconductor |
75 |
F100179 |
-4.2 V to -5.7 V, carry lookahead generator |
National Semiconductor |
76 |
F100180 |
-4.2 V to -5.7 V, high-speed 6-bit adder |
National Semiconductor |
77 |
F100181 |
-4.2 V to -5.7 V, 4-bit binary/BCD arithmetic logic unit |
National Semiconductor |
78 |
F100182 |
-4.2 V to -5.7 V, 9-bit wallace tree adder |
National Semiconductor |
79 |
F100183 |
-4.2 V to -5.7 V, 2 x 8 recode multiplier |
National Semiconductor |
80 |
F1001C |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
81 |
FRAF1001G |
Rectifier: Fast |
Taiwan Semiconductor |
82 |
FRF1001G |
Rectifier: Fast |
Taiwan Semiconductor |
83 |
GPF1001 |
Rectifier: Standard |
Taiwan Semiconductor |
84 |
HAF1001 |
Thermal MOS FETs |
Hitachi Semiconductor |
85 |
HAF1001 |
Transistors>Switching/MOSFETs |
Renesas |
86 |
HERAF1001G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
87 |
HERF1001G |
Rectifier: High Efficient |
Taiwan Semiconductor |
88 |
MGF1001BT |
Tape carrier microwave power GaAs fet |
Mitsubishi Electric Corporation |
89 |
MRF1001 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
90 |
MRF1001A |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
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