| No. |
Part Name |
Description |
Manufacturer |
| 61 |
DBF250C |
Single-Phase Bridge Rectifying Diodes |
SANYO |
| 62 |
DBF250G |
Single-Phase Bridge Rectifying Diodes |
SANYO |
| 63 |
FRF250D |
23A/ 200V/ 0.115 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
| 64 |
FRF250H |
23A/ 200V/ 0.115 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
| 65 |
FRF250R |
23A/ 200V/ 0.115 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
| 66 |
FSF250 |
24A/ 200V/ 0.110 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 67 |
FSF250D |
24A/ 200V/ 0.110 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 68 |
FSF250D1 |
24A/ 200V/ 0.110 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 69 |
FSF250D3 |
24A/ 200V/ 0.110 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 70 |
FSF250R |
24A/ 200V/ 0.110 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 71 |
FSF250R1 |
24A/ 200V/ 0.110 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 72 |
FSF250R3 |
24A/ 200V/ 0.110 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 73 |
FSF250R4 |
24A/ 200V/ 0.110 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 74 |
HD74CDCF2509B |
9-bit PLL Clock-Driver for PC133 |
Hitachi Semiconductor |
| 75 |
HD74CDCF2509B |
140 MHz, 0 to 85C Operation 3.3-V Phase-lock Loop Clock Driver |
Hitachi Semiconductor |
| 76 |
HD74CDCF2509B |
ASSP>Special Logic ICs for PC>HD74CDC Series(Special Logic for PC) |
Renesas |
| 77 |
HF250-50 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 78 |
IRF250 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
| 79 |
IRF250 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
| 80 |
IRF250 |
30A/ 200V/ 0.085 Ohm/ N-Channel Power MOSFET |
Intersil |
| 81 |
IRF250 |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 82 |
IRF250 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 83 |
IRF250 |
N-CHANNEL POWER MOSFET |
SemeLAB |
| 84 |
IRF250 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 30A |
Siliconix |
| 85 |
IRF250CF |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 86 |
IRF250FI |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 87 |
IRF250R |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 88 |
IRF250SMD |
N.CHANNEL POWER MOSFET |
SemeLAB |
| 89 |
IRFK2F250 |
200V HALF BRDG HEXFET Power MOSFET in a TO-240AA package |
International Rectifier |
| 90 |
IRFK3F250 |
lsolated Base Power HEX-pak Assembly - Half Bridge Configuration |
International Rectifier |
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