| No. |
Part Name |
Description |
Manufacturer |
| 61 |
BF998RA |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 62 |
BF998RAW |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 63 |
BF998RB |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 64 |
BF998RBW |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 65 |
BF998RW |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 66 |
BF998W |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 67 |
BF998W |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
| 68 |
BF998WR |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 69 |
BF998WR |
N-channel dual-gate MOS-FET |
Philips |
| 70 |
BF999 |
Silicon N-Channel MOSFET Triode |
Infineon |
| 71 |
BF999 |
RF-MOSFET - VDS=15V, gfs=16mS, Gp=25dB, F=1dB |
Infineon |
| 72 |
BF999 |
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) |
Siemens |
| 73 |
CYRF9935-24LQXC |
WirelessUSB™ NX 2.4 GHz Low Power Radio |
Cypress |
| 74 |
ERJL03UF99MV |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
| 75 |
ERJL06UF99MV |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
| 76 |
ERJL08UF99MV |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
| 77 |
ERJL12UF99MU |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
| 78 |
ERJL14UF99MU |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
| 79 |
ERJL1DUF99MU |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
| 80 |
ERJL1WUF99MU |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
| 81 |
IRF9910 |
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 82 |
IRF9910PBF |
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 83 |
IRF9910PBF-1 |
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 84 |
IRF9910TR |
Leaded 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 85 |
IRF9910TRPBF-1 |
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 86 |
IRF9952 |
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 87 |
IRF9952Q |
30V Dual N- and P- Channel HEXFET Power MOSFET in a Lead-Free SO-8 package |
International Rectifier |
| 88 |
IRF9952QPBF |
30V Dual N- and P- Channel HEXFET Power MOSFET in a Lead-Free SO-8 package |
International Rectifier |
| 89 |
IRF9952QTRPBF |
30V Dual N- and P- Channel HEXFET Power MOSFET in a Lead-Free SO-8 package |
International Rectifier |
| 90 |
IRF9952TR |
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
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