| No. |
Part Name |
Description |
Manufacturer |
| 61 |
CFD1264AQ |
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940AQ |
Continental Device India Limited |
| 62 |
CFD1264P |
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940P |
Continental Device India Limited |
| 63 |
CFD1264Q |
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940Q |
Continental Device India Limited |
| 64 |
CFD1275 |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949 |
Continental Device India Limited |
| 65 |
CFD1275A |
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949A |
Continental Device India Limited |
| 66 |
CFD1275AP |
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP |
Continental Device India Limited |
| 67 |
CFD1275AQ |
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ |
Continental Device India Limited |
| 68 |
CFD1275AR |
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949AR |
Continental Device India Limited |
| 69 |
CFD1275P |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949P |
Continental Device India Limited |
| 70 |
CFD1275Q |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q |
Continental Device India Limited |
| 71 |
CFD1275R |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R |
Continental Device India Limited |
| 72 |
CFD1499 |
2.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 60 - 200 hFE. Complementary CFB1063 |
Continental Device India Limited |
| 73 |
CFD1499P |
2.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 100 - 200 hFE. Complementary CFB1063P |
Continental Device India Limited |
| 74 |
CFD1499Q |
2.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 60 - 120 hFE. Complementary CFB1063Q |
Continental Device India Limited |
| 75 |
CFD1933 |
30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 1000 - 10000 hFE. |
Continental Device India Limited |
| 76 |
CFD1933A |
60.000W Medium Power NPN Plastic Leaded Transistor. 110V Vceo, 6.000A Ic, 1000 hFE. |
Continental Device India Limited |
| 77 |
EEFFD1B150R |
Conductive Polymer Aluminum Electrolytic Capacitors FD |
Panasonic |
| 78 |
EFD103 |
Germanium diode |
IPRS Baneasa |
| 79 |
EFD103 |
Ge POINT CONTACT DIODE |
IPRS Baneasa |
| 80 |
EFD103 |
Germanium Point Contact Diode |
IPRS Baneasa |
| 81 |
EFD104 |
Germanium Point Contact Diode |
IPRS Baneasa |
| 82 |
EFD104 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
| 83 |
EFD105 |
Germanium diode |
IPRS Baneasa |
| 84 |
EFD105 |
Ge POINT CONTACT DIODE |
IPRS Baneasa |
| 85 |
EFD105 |
Germanium point contact diode, intended for use in medium speed switching applications |
IPRS Baneasa |
| 86 |
EFD106 |
Germanium diode |
IPRS Baneasa |
| 87 |
EFD106 |
Ge POINT CONTACT DIODE |
IPRS Baneasa |
| 88 |
EFD106 |
Germanium Point Contact Diode |
IPRS Baneasa |
| 89 |
EFD106 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
| 90 |
EFD107 |
Germanium diode |
IPRS Baneasa |
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