| No. |
Part Name |
Description |
Manufacturer |
| 61 |
AFE4405 |
Ultra-Small, Integrated AFE with FIFO for Wearable, Optical, Heart-Rate 30-DSBGA -20 to 70 |
Texas Instruments |
| 62 |
AFE4405YZR |
Ultra-Small, Integrated AFE with FIFO for Wearable, Optical, Heart-Rate 30-DSBGA -20 to 70 |
Texas Instruments |
| 63 |
AFE58JD16 |
16-Channel, Ultrasound, AFE with 90-mW/Channel Power, 0.95-nV/?Hz Nois 289-NFBGA -40 to 85 |
Texas Instruments |
| 64 |
AFE58JD16ZAV |
16-Channel, Ultrasound, AFE with 90-mW/Channel Power, 0.95-nV/?Hz Nois 289-NFBGA -40 to 85 |
Texas Instruments |
| 65 |
AN1012 |
PREDICTING THE BATTERY LIFE AND DATA RETENTION PERIOD OF NVRAMS |
SGS Thomson Microelectronics |
| 66 |
AN1351 |
VIPOWER AND BCDMULTIPOWER: MAKING LIFE EASIER WITH ST'S HIGH SIDE DRIVERS |
SGS Thomson Microelectronics |
| 67 |
APPLICATION-NOTE |
The use of safe operating area |
NEC |
| 68 |
BC212 |
ft min 200 MHz hfe min 60 Transistor polarity PNP Current Ic continuous max 0.2 A Voltage Vcbo 60 V Voltage Vceo 50 V Current Ic (hfe) 2 mA Power Ptot 625 mW |
Fairchild Semiconductor |
| 69 |
BC477 |
ft min 100 MHz hfe min 50 Transistor polarity PNP Current Ic continuous max 0.15 A Voltage Vcbo 90 V Voltage Vceo 80 V Current Ic (hfe) 2 mA Power Ptot 360 mW |
SGS Thomson Microelectronics |
| 70 |
BC848A |
hfe min 110 NF max. 10 dB Transistor polarity NPN Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 350 mW |
Fairchild Semiconductor |
| 71 |
BC848C |
hfe min 420 NF max. 10 dB Transistor polarity NPN Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 250 mW |
Fairchild Semiconductor |
| 72 |
BC858C |
hfe min 420 NF max. 10 dB Transistor polarity PNP Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 350 mW |
Fairchild Semiconductor |
| 73 |
BCM5324M |
Integrated 24 FE + 2GbE Managed Switch |
Broadcom |
| 74 |
BCM847BS |
BCM847BS; NPN matched double transistor; delta h_FE = 10 % |
Philips |
| 75 |
BCM847BS |
NPN matched double transistor; delta hFE = 10 % |
Philips |
| 76 |
BCM857BS |
PNP matched double transistor; delta hFE = 10 % |
Philips |
| 77 |
BCM857BS |
BCM857BS; PNP matched double transistor; delta h_FE = 10 % |
Philips |
| 78 |
BCX54 |
General Purpose Transistors - SOT89; VCEO=45V; hFE 40..250 |
Infineon |
| 79 |
BD137 |
hfe min 40 Transistor polarity NPN Current Ic continuous max 1 A Voltage Vceo 60 V Current Ic (hfe) 0.15 A Power Ptot 12.5 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
| 80 |
BK110AAH |
Nickel Metal Hydride Batteries - Back-up type/ High temperature & long life type |
Panasonic |
| 81 |
BK120AAHU |
Nickel Metal Hydride Batteries - Back-up type/ High temperature & long life type |
Panasonic |
| 82 |
BK150AAH |
Nickel Metal Hydride Batteries - Back-up type/ High temperature & long life type |
Panasonic |
| 83 |
BK160AH |
Nickel Metal Hydride Batteries - Back-up type/ High temperature & long life type |
Panasonic |
| 84 |
BK210AH |
Nickel Metal Hydride Batteries - Back-up type/ High temperature & long life type |
Panasonic |
| 85 |
BK370AH |
Nickel Metal Hydride Batteries - Back-up type/ High temperature & long life type |
Panasonic |
| 86 |
BK60AAAH |
Nickel Metal Hydride Batteries - Back-up type/ High temperature & long life type |
Panasonic |
| 87 |
BK70AAH |
Nickel Metal Hydride Batteries - Back-up type/ High temperature & long life type |
Panasonic |
| 88 |
BQ29312APWG4 |
Two, Three and Four Cell Lithium or Lithium-Polymer Battery Protection AFE 24-TSSOP -40 to 85 |
Texas Instruments |
| 89 |
BQ29312APWRG4 |
Two, Three and Four Cell Lithium or Lithium-Polymer Battery Protection AFE 24-TSSOP -40 to 85 |
Texas Instruments |
| 90 |
BQ29312PWG4 |
Two, Three and Four Cell Lithium or Lithium-Polymer Battery Protection AFE 24-TSSOP -25 to 85 |
Texas Instruments |
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