| No. |
Part Name |
Description |
Manufacturer |
| 61 |
IXFN100N10S2 |
100V HiPerFET power MOSFET with schottky diodes |
IXYS |
| 62 |
IXFN100N10S3 |
100V HiPerFET power MOSFET with schottky diodes |
IXYS |
| 63 |
IXKF40N60SCD1 |
CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PAC |
IXYS Corporation |
| 64 |
LD1003S |
High Performance N-Channel POWERJFET with Schottky Diode |
etc |
| 65 |
LD1010D |
High Performance N-Channel POWERJFET with PN Diodes |
etc |
| 66 |
LMN200B01 |
200 mA LOAD SWITCH PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH PULL DOWN RESISTOR |
Diodes |
| 67 |
LMN200B02 |
200 mA LOAD SWITCH PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH GATE PULL DOWN RESISTOR |
Diodes |
| 68 |
LMN400B01 |
400mA LOAD SWITCH PNP TRANSISTOR AND N-MOSFET WITH GATE PULL-DOWN RESISTOR |
Diodes |
| 69 |
MMDFS2P102 |
P-Channel Power MOSFET with Schottky Rectifier 20 Volts |
Motorola |
| 70 |
NIC9N05TS1 |
Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection |
ON Semiconductor |
| 71 |
NID5003N |
Self-Protected FET with Temperature and Current Limit 42 V, 20 A, Single N-Channel, DPAK |
ON Semiconductor |
| 72 |
NID5003NT4 |
Self-Protected FET with Temperature and Current Limit 42 V, 20 A, Single N-Channel, DPAK |
ON Semiconductor |
| 73 |
NID5004N |
Self-Protected FET with Temperature and Current Limit 40 V, 6.5 A, Single N-Channel, DPAK |
ON Semiconductor |
| 74 |
NID6002N |
Self-Protected FET with Temperature and Current Limit 65 V, 6.5 A, Single N-Channel, DPAK |
ON Semiconductor |
| 75 |
NID9N05CL |
Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package |
ON Semiconductor |
| 76 |
NID9N05CLT4 |
Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package |
ON Semiconductor |
| 77 |
NID9N05CLT4G |
Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package |
ON Semiconductor |
| 78 |
NIF5002N |
Self-Protected Fet w/ Temperature and Current Limit 42 V 2.0 A Single N Channel SOT-223 |
ON Semiconductor |
| 79 |
NIF5002ND |
Self-Protected FET with Temperature and Current Limit |
ON Semiconductor |
| 80 |
NIF5002NT1 |
Self-Protected Fet w/ Temperature and Current Limit 42 V 2.0 A Single N Channel SOT-223 |
ON Semiconductor |
| 81 |
NIF5002NT1G |
Self-Protected Fet w/ Temperature and Current Limit 42 V 2.0 A Single N Channel SOT-223 |
ON Semiconductor |
| 82 |
NIF5002NT3 |
Self-Protected Fet w/ Temperature and Current Limit 42 V 2.0 A Single N Channel SOT-223 |
ON Semiconductor |
| 83 |
NIF5003N |
Self-protected FET with Temperature and Current Limit 42 V, 14 A, Single N-Channel, SOT-223 |
ON Semiconductor |
| 84 |
NIF9N05CL |
Protected Power MOSFET 2.6 A, 52V N-Ch Logic Level, Clamped MOSFET w/ESD Protection |
ON Semiconductor |
| 85 |
NIF9N05CLT1 |
Protected Power MOSFET 2.6 A, 52V N-Ch Logic Level, Clamped MOSFET w/ESD Protection |
ON Semiconductor |
| 86 |
NIF9N05CLT3 |
Protected Power MOSFET 2.6 A, 52V N-Ch Logic Level, Clamped MOSFET w/ESD Protection |
ON Semiconductor |
| 87 |
NILMS4501N |
Power MOSFET with Current Mirror FET 24V, 9.5 A, N-Channel, ESD Protected, 1:250 Current Mirror, SO-8 Lead Less QFN |
ON Semiconductor |
| 88 |
NUS5530MN |
Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor |
ON Semiconductor |
| 89 |
PB-IRF6609 |
Leaded A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 90 |
PB-IRF6613 |
Leaded A 40V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
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