| No. |
Part Name |
Description |
Manufacturer |
| 61 |
BA189 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 62 |
BA190 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 63 |
BAY17 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 64 |
BAY18 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 65 |
BAY19 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 66 |
BAY20 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 67 |
BBY51 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
| 68 |
BBY51-03W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 69 |
BBY51-07 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation |
Siemens |
| 70 |
BBY52 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
| 71 |
BBY52-03W |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
| 72 |
BBY53 |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 73 |
BBY53-02W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 74 |
BBY53-03W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 75 |
BC110 |
NPN Silicon Transistor for AF amplifier stages with high operating voltage |
Siemens |
| 76 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 77 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 78 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 79 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 80 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 81 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 82 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 83 |
BF2030W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 84 |
BF2040 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 85 |
BF2040W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 86 |
BFY65 |
Silicon NPN Planar Transistor with high blocking voltage, especially for controlling number display tubes |
TELEFUNKEN |
| 87 |
BU111 |
NPN Silicon High-Power switching transistor for high operating voltages |
Siemens |
| 88 |
BU114 |
NPN Silicon High-Power switching transistor for high operating voltages |
Siemens |
| 89 |
BZY85 |
Silicon Z-diodes for stabilizing voltages and generating reference voltages |
AEG-TELEFUNKEN |
| 90 |
BZY85B |
Silicon Z-diodes for stabilizing voltages and generating reference voltages |
AEG-TELEFUNKEN |
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