No. |
Part Name |
Description |
Manufacturer |
61 |
2N5912 |
Matched High Gain |
Vishay |
62 |
2N5912C |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
63 |
2N5916 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
64 |
2N5917 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
65 |
2N5918 |
10W, 400-MHz High-Gain Silicon NPN Emitter-Ballasted Overaly RF Transistor |
RCA Solid State |
66 |
2N6383 |
10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
67 |
2N6384 |
10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
68 |
2N6385 |
10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
69 |
2N6386 |
10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
70 |
2N6387 |
10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
71 |
2N6388 |
10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
72 |
2N653 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
73 |
2N6530 |
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A. |
General Electric Solid State |
74 |
2N6531 |
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A. |
General Electric Solid State |
75 |
2N6532 |
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A. |
General Electric Solid State |
76 |
2N6533 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A. |
General Electric Solid State |
77 |
2N654 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
78 |
2N655 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
79 |
2N6576 |
15 A N-P-N darlington power transistor. 60 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
80 |
2N6577 |
15 A N-P-N darlington power transistor. 90 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
81 |
2N6578 |
15 A N-P-N darlington power transistor. 120 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
82 |
2N6648 |
10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
83 |
2N6649 |
10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
84 |
2N6650 |
10 A P-N-P darlington power transistor. -80 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
85 |
2N6666 |
10 A P-N-P darlington power transistor. -40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
86 |
2N6667 |
10 A P-N-P darlington power transistor. -60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
87 |
2N6668 |
10 A P-N-P darlington power transistor. -80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
88 |
2SA1612 |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR |
NEC |
89 |
2SA811 |
Audio frequency high gain amplifier PNP silicon epitaxial transistor |
NEC |
90 |
2SA811A |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
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