| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2SK2332 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 62 |
2SK2496 |
RF Single Gate FETs |
TOSHIBA |
| 63 |
2SK2497 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 64 |
2SK2856 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 65 |
2SK3179 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE )UHF~SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 66 |
320PJT200 |
V(rrm/drm): 2000V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 67 |
320PJT200A |
V(rrm/drm): 2000V; 1400A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 68 |
320PJT250 |
V(rrm/drm): 2000V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 69 |
320PJT250A |
V(rrm/drm): 2500V; 1400A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 70 |
323 |
Quad 2 Input Gate Collector OR able |
Amelco Semiconductor |
| 71 |
323B |
Quad 2 Input Gate Collector OR able |
Amelco Semiconductor |
| 72 |
323C |
Quad 2 Input Gate Collector OR able |
Amelco Semiconductor |
| 73 |
350PJT100 |
V(rrm/drm): 1000V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 74 |
350PJT120 |
V(rrm/drm): 1200V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 75 |
350PJT140 |
V(rrm/drm): 1400V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 76 |
350PJT160 |
V(rrm/drm): 1600V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 77 |
3N140 |
N-Channel dual-gate silicon-nitride passivated MOS field-effect transistor |
Motorola |
| 78 |
3N140 |
Silicon n channel field effect transistor dual insulated GATE FET (Tetrode MOST), |
Mullard |
| 79 |
3N141 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
| 80 |
3N142 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
| 81 |
3N153 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
| 82 |
3N187 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 83 |
3N187 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
Vaishali Semiconductor |
| 84 |
3N200 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 85 |
3N200 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
Intersil |
| 86 |
3N201 |
DUAL GATE MOSFET VHF AMPLIFIER |
Motorola |
| 87 |
3N202 |
DUAL GATE MOSFET VHF AMPLIFIER |
Motorola |
| 88 |
3N203 |
DUAL GATE MOSFET VHF AMPLIFIER |
Motorola |
| 89 |
3N204 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 90 |
3N204 |
N-channel-defletion dual-gate MOSFET. |
Motorola |
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