No. |
Part Name |
Description |
Manufacturer |
61 |
BSM150GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
62 |
BSM150GB170DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
63 |
BSM200GB120 |
IGBT Power Module (Low Loss IGBT Low inductance halfbridge Including fast free- wheeling diodes) |
Siemens |
64 |
BSM200GB120DL |
IGBT Power Module (Low Loss IGBT Low inductance halfbridge Including fast free- wheeling diodes) |
Siemens |
65 |
BSM200GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
66 |
BSM200GB170DLC |
Technical Information |
Eupec GmbH |
67 |
BSM25GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
68 |
BSM35GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area) |
Siemens |
69 |
BSM50GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
70 |
BSM50GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
71 |
BSM75GB120DLC |
Hchstzulssige Werte Maximum rated values |
Eupec GmbH |
72 |
BSM75GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
73 |
BSM75GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
74 |
DS26518GB1 |
8-Port T1/E1/J1 Transceiver |
MAXIM - Dallas Semiconductor |
75 |
DS26518GB1+ |
8-Port T1/E1/J1 Transceiver |
MAXIM - Dallas Semiconductor |
76 |
ECEC2GB101CJ |
Aluminum Electrolytic Capacitors (Radial Lead Type) HB-TS |
Panasonic |
77 |
ECEC2GB151DJ |
Aluminum Electrolytic Capacitors (Radial Lead Type) HB-TS |
Panasonic |
78 |
ECEC2GB181BJ |
Aluminum Electrolytic Capacitors (Radial Lead Type) HB-TS |
Panasonic |
79 |
ECEC2GB181DJ |
Aluminum Electrolytic Capacitors (Radial Lead Type) HB-TS |
Panasonic |
80 |
GB1010EPL |
2.5 mA, spectra-band photocell |
Texas Instruments |
81 |
GB1020EPL |
5 mA, spectra-band photocell |
Texas Instruments |
82 |
GB10RF120K |
1200V 20A Low Vce Non Punch Through IGBT in a Econo2 PIM Package |
International Rectifier |
83 |
GB10XF120K |
1200V 20A Low Vce Non Punch Through IGBT in a Econo2 6PACK Package |
International Rectifier |
84 |
GB15RF120K |
1200V 18A Low Vce Non Punch Through IGBT in a Econo2 PIM Package |
International Rectifier |
85 |
GB15XF120K |
1200V 25A Low Vce Non Punch Through IGBT in a Econo2 6PACK Package |
International Rectifier |
86 |
IGB15N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... |
Infineon |
87 |
IRGB10B60KD |
600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package |
International Rectifier |
88 |
IRGB10B60KDPBF |
600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package |
International Rectifier |
89 |
IRGB14C40L |
430V Low-Vceon Discrete IGBT in a TO-220AB package |
International Rectifier |
90 |
IRGB14C40LPBF |
430V Low-Vceon Discrete IGBT in a TO-220AB package |
International Rectifier |
| | | |