| No. |
Part Name |
Description |
Manufacturer |
| 61 |
GT30J324 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 62 |
GT30J341 |
Discrete IGBT |
TOSHIBA |
| 63 |
IXGT30N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT |
IXYS |
| 64 |
IXGT30N60BD1 |
HiPerFASTTM IGBT with Diode |
IXYS Corporation |
| 65 |
IXGT30N60BU1 |
HiPerFAST IGBT with Diode |
IXYS Corporation |
| 66 |
KGT30N135NDH |
IGBT |
Korea Electronics (KEC) |
| 67 |
RGT30NS65D |
650V 15A Field Stop Trench IGBT |
ROHM |
| 68 |
RGT30NS65DGTL |
650V 15A Field Stop Trench IGBT |
ROHM |
| | | |
