No. |
Part Name |
Description |
Manufacturer |
61 |
GT400C/9 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
62 |
GT400D/10 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
63 |
GT400D/3 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
64 |
GT400D/4 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
65 |
GT400D/5 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
66 |
GT400D/6 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
67 |
GT400D/7 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
68 |
GT400D/8 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
69 |
GT400D/9 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
70 |
GT400E/10 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
71 |
GT400E/3 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
72 |
GT400E/4 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
73 |
GT400E/5 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
74 |
GT400E/6 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
75 |
GT400E/7 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
76 |
GT400E/8 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
77 |
GT400E/9 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
78 |
GT40G121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications |
TOSHIBA |
79 |
GT40J121 |
IGBT for soft switching applications |
TOSHIBA |
80 |
GT40J321 |
IGBT for soft switching applications |
TOSHIBA |
81 |
GT40J322 |
IGBT for soft switching applications |
TOSHIBA |
82 |
GT40J325 |
IGBT for soft switching applications |
TOSHIBA |
83 |
GT40M101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
84 |
GT40M301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
85 |
GT40Q321 |
Injection Enhanced Gate Transistor Silicon N Channel IEGT Voltage Resonance Inverter Switching Application |
TOSHIBA |
86 |
GT40Q322 |
Voltage Resonance Inverter Switching Application |
TOSHIBA |
87 |
GT40QR21 |
IGBT for soft switching applications |
TOSHIBA |
88 |
GT40RR21 |
IGBT for soft switching applications |
TOSHIBA |
89 |
GT40T101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
90 |
GT40T301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications |
TOSHIBA |
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