| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N4002G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 62 |
1N4003 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 63 |
1N4003G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 64 |
1N4004 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 65 |
1N4004G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 66 |
1N4005 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 67 |
1N4005G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 68 |
1N4006 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 69 |
1N4006G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 70 |
1N4007 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 71 |
1N4007G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 72 |
1S77H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 73 |
1S78H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 74 |
1S79H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 75 |
2322 633 3/5/8. . . . |
NTC Thermistors, High Temperature Sensors |
Vishay |
| 76 |
23226333 |
NTC Thermistors, High Temperature Sensors |
Vishay |
| 77 |
23226335 |
NTC Thermistors, High Temperature Sensors |
Vishay |
| 78 |
23226338 |
NTC Thermistors, High Temperature Sensors |
Vishay |
| 79 |
2417G4A |
NetLight 2417G4A and 2417H4A ATM/SONET/SDH Transceivers |
Agere Systems |
| 80 |
2417H4A |
NetLight 2417G4A and 2417H4A ATM/SONET/SDH Transceivers |
Agere Systems |
| 81 |
26LS31 |
QUAD EIA.422 LINE DRIVER WITH THREE.STATE OUTPUTS |
Motorola |
| 82 |
26LS32 |
QUAD EIA-422/3 LINE RECEIVER WITH THREE.STATE OUTPUTS |
Motorola |
| 83 |
2N2710 |
NPN small signal high speed low power saturated switch transistor. |
Fairchild Semiconductor |
| 84 |
2N3714 |
80V Silicon NPN power high transistor |
MOSPEC Semiconductor |
| 85 |
2N3715 |
60V Silicon NPN power high transistor |
MOSPEC Semiconductor |
| 86 |
2N6093 |
75W (PEP) Emitter-Ballasted Overlay Transistor with Temperature-Sensing Diode |
RCA Solid State |
| 87 |
2N7593U3 |
250V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package. Also available with Total Dose Rating of 300kRads. |
International Rectifier |
| 88 |
2SC2001 |
Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 |
USHA India LTD |
| 89 |
2SD1071 |
TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH TRANSISTOR HIGH VOLTAGE POWER AMPLIFIER |
Fuji Electric |
| 90 |
2SD929 |
TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH TRANSISTOR |
Unknow |
| | | |
