| No. |
Part Name |
Description |
Manufacturer |
| 61 |
BB659C |
Silicon Variable Capacitance Diode (For VHF-TV-tuners High capacitance ratio Low series inductance Low series resistance) |
Siemens |
| 62 |
BF272A |
Epitaxial planar PNP transistor designed for RF stages of UHF-VHF tuners, high gain, low feedback capacitance, low noise |
SGS-ATES |
| 63 |
BF272S |
Epitaxial planar PNP transistor designed for UHF-VHF low noise amplifier, high gain, low feedback capacitance |
SGS-ATES |
| 64 |
BF479 |
RF PNP transistor for UHF-VHF applications |
IPRS Baneasa |
| 65 |
BF479S |
Epitaxial planar PNP transistor, intended for high current UHF-VHF stages of TV tuners |
SGS-ATES |
| 66 |
BF679 |
Epitaxial planar PNP transistor, intended to be used in UHF-VHF range up to 900MHz |
SGS-ATES |
| 67 |
BF679M |
Epitaxial planar PNP transistor, intended to be used in UHF-VHF range up to 900MHz, low thermal drift |
SGS-ATES |
| 68 |
BF679S |
Epitaxial planar PNP transistor intended for use as UHF-VHF amplifier up to 900MHz |
SGS-ATES |
| 69 |
BF921S |
Epitaxial planar NPN transistor, intended for use as preamplifier for surface wave TV IF filters and VHF-UHF wide band amplifier |
SGS-ATES |
| 70 |
BFR90 |
Epitaxial planar NPN transistor, utilizing Planox® silicon nitride, intended for VHF-UHF wide band applications |
SGS-ATES |
| 71 |
BFR90H |
Epitaxial planar NPN transistor, intended for VHF-UHF wide-band application |
SGS-ATES |
| 72 |
BFR91 |
Epitaxial planar NPN transistor, designed for VHF-UHF medium level amplifier up to 1.5GHz |
SGS-ATES |
| 73 |
BFR91H |
Epitaxial planar NPN transistor, designed for VHF-UHF wide-band application |
SGS-ATES |
| 74 |
BFR96 |
Epitaxial planar NPN transistor for VHF-UHF high level amplifier |
SGS-ATES |
| 75 |
BFR96H |
Epitaxial planar NPN transistor for VHF-UHF high level amplifier |
SGS-ATES |
| 76 |
BFW94 |
Epitaxial planar NPN transistor for ultra linear VHF-UHF amplifier |
SGS-ATES |
| 77 |
BFX89 |
RF NPN transistor for UHF-VHF amplifier |
IPRS Baneasa |
| 78 |
BFY90 |
RF NPN transistor for UHF-VHF amplifier |
IPRS Baneasa |
| 79 |
BLF242 |
HF-VHF power MOS transistor |
NXP Semiconductors |
| 80 |
CA4800 |
VHF-UHF Linear Amplifier 17dB Gain, wide bandwidth 10-1000MHz, optimized for 24V power supply |
TRW |
| 81 |
CA4812 |
VHF-UHF Linear Amplifier 17dB Gain, wide bandwidth 10-1000MHz, optimized for 12V power supply |
TRW |
| 82 |
CA4815 |
VHF-UHF Linear Amplifier 17dB Gain, wide bandwidth 10-1000MHz, optimized for 15V power supply |
TRW |
| 83 |
CA5800 |
VHF-UHF Linear Amplifier 10-1000MHz, 15dB Gain, optimized for 28V power supply |
TRW |
| 84 |
CA5815 |
VHF-UHF Linear Amplifier 16dB Gain, 10-1000MHz |
TRW |
| 85 |
CB1AHF-T-DM12V |
HIGH POWER AUTOMOTIVE RELAY CB-RELAYS |
Matsushita Electric Works(Nais) |
| 86 |
CB1AHF-T-DM24V |
HIGH POWER AUTOMOTIVE RELAY CB-RELAYS |
Matsushita Electric Works(Nais) |
| 87 |
CB1AHF-T-DP12V |
HIGH POWER AUTOMOTIVE RELAY CB-RELAYS |
Matsushita Electric Works(Nais) |
| 88 |
CB1AHF-T-DP24V |
HIGH POWER AUTOMOTIVE RELAY CB-RELAYS |
Matsushita Electric Works(Nais) |
| 89 |
CB1AHF-T-RM12V |
HIGH POWER AUTOMOTIVE RELAY CB-RELAYS |
Matsushita Electric Works(Nais) |
| 90 |
CB1AHF-T-RM24V |
HIGH POWER AUTOMOTIVE RELAY CB-RELAYS |
Matsushita Electric Works(Nais) |
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