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Datasheets for IN M

Datasheets found :: 2883
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No. Part Name Description Manufacturer
61 2SA1227 Trans GP BJT PNP 40V 0.03A 3-Pin Mini-Mold New Jersey Semiconductor
62 2SA1250 Trans GP BJT PNP 20V 0.03A 3-Pin M-A1 New Jersey Semiconductor
63 2SA1295 Trans GP BJT PNP 230V 17A 3-Pin MT-200 Bulk New Jersey Semiconductor
64 2SA15 Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier, Frequency Converter Hitachi Semiconductor
65 2SA15H Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier Hitachi Semiconductor
66 2SA17H Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching Hitachi Semiconductor
67 2SA18H Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching Hitachi Semiconductor
68 2SA354 Germanium PNP Transistor Drift Junction, intended for use in MW Frequency Converter Hitachi Semiconductor
69 2SA355 Germanium PNP Transistor Drift Junction, intended for use in MW RF Amplifier Hitachi Semiconductor
70 2SA537AH Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications Hitachi Semiconductor
71 2SA537H Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications Hitachi Semiconductor
72 2SA548H Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching, RF Amplifier Hitachi Semiconductor
73 2SC2464 Trans GP BJT NPN 50V 0.1A 3-Pin MPAK New Jersey Semiconductor
74 2SC282H Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching Hitachi Semiconductor
75 2SC284H Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching Hitachi Semiconductor
76 2SC3604 Trans GP BJT NPN 10V 0.065A 4-Pin Micro-X New Jersey Semiconductor
77 2SC454 Silicon NPN Epitaxial LTP Transistor, intended for use in MW Frequency Converter, 455kHz Intermediate Frequency Amplifier Hitachi Semiconductor
78 2SC5177 NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NEC
79 2SC5178 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NEC
80 2SC5178-T1 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NEC
81 2SC5178-T2 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NEC
82 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NEC
83 2SC5182-T1 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NEC
84 2SC5182-T2 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NEC
85 2SC5183 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NEC
86 2SC5183-T1 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NEC
87 2SC5183-T2 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NEC
88 2SC5454 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD NEC
89 2SC5455 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD NEC
90 2SC5772 Trans GP BJT NPN 9V 0.075A 3-Pin MPAK New Jersey Semiconductor


Datasheets found :: 2883
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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