No. |
Part Name |
Description |
Manufacturer |
61 |
MRF581A |
Trans GP BJT NPN 15V 0.2A 4-Pin Macro-X |
New Jersey Semiconductor |
62 |
MRF581AG |
Trans GP BJT NPN 15V 0.2A 4-Pin Macro-X |
New Jersey Semiconductor |
63 |
MRF581M |
Trans GP BJT NPN 18V 0.2A 4-Pin Macro-X |
New Jersey Semiconductor |
64 |
MSM9802 |
Voice Synthesis IC with Built-in Mask ROM |
OKI electronic components |
65 |
MSM9802-XXXGS-AK |
Voice synthesis IC with built-in Mask ROM |
OKI electronic components |
66 |
MSM9802-XXXGS-K |
Voice synthesis IC with built-in Mask ROM |
OKI electronic components |
67 |
MSM9802-XXXRS |
Voice synthesis IC with built-in Mask ROM |
OKI electronic components |
68 |
MSM9803 |
Voice Synthesis IC with Built-in Mask ROM |
OKI electronic components |
69 |
MSM9803-XXXGS-AK |
Voice synthesis IC with built-in Mask ROM |
OKI electronic components |
70 |
MSM9803-XXXGS-K |
Voice synthesis IC with built-in Mask ROM |
OKI electronic components |
71 |
MSM9803-XXXRS |
Voice synthesis IC with built-in Mask ROM |
OKI electronic components |
72 |
MSM9805-XXX |
Voice Synthesis IC with Built-in Mask ROM |
OKI electronic components |
73 |
MSM9805-XXXGS-AK |
Voice synthesis IC with built-in Mask ROM |
OKI electronic components |
74 |
MSM9805-XXXGS-K |
Voice synthesis IC with built-in Mask ROM |
OKI electronic components |
75 |
MSM9805-XXXRS |
Voice synthesis IC with built-in Mask ROM |
OKI electronic components |
76 |
MSM9836 |
Voice Synthesis IC with Built-in Mask ROM |
OKI electronic components |
77 |
MSM9836-XXX |
Voice Synthesis IC with Built-in Mask ROM |
OKI electronic components |
78 |
MSM9836-XXXGS-K |
Voice synthesis IC with built-in Mask ROM |
OKI electronic components |
79 |
S-MX2 |
Microwave mixer, intended to be used in marine radar receiver, doppler radar mixer applications |
TOSHIBA |
80 |
SFM121 |
Tungsten point contact germanium diodes assemblies, two in matched diodes |
SESCOSEM |
81 |
STY100NM60N |
N-channel 600 V, 0.025 Ohm typ., 98 A, MDmesh(TM) II Power MOSFET in Max247 package |
ST Microelectronics |
82 |
STY105NM50N |
N-channel 500 V, 0.018 Ohm typ., 110 A MDmesh(TM) II Power MOSFET in Max247 package |
ST Microelectronics |
83 |
STY112N65M5 |
N-channel 650 V, 0.019 Ohm, 96 A, MDmesh(TM) V Power MOSFET in Max247 |
ST Microelectronics |
84 |
STY130NF20D |
N-channel 200 V, 0.01 Ohm typ., 130 A, STripFET(TM) II with fast recovery diode Power MOSFET in Max247 package |
ST Microelectronics |
85 |
STY139N65M5 |
N-channel 650 V, 0.014 Ohm typ., 130 A, MDmesh(TM) V Power MOSFET in Max247 package |
ST Microelectronics |
86 |
STY145N65M5 |
N-channel 650 V, 0.012 Ohm typ., 138 A, MDmesh(TM) V Power MOSFET in Max247 package |
ST Microelectronics |
87 |
TC826 |
In many applications a graphical display is preferred over a digital display. Knowing a process or system operates, for example, within design limits is more valuable than a direct system variable readout. A bar or moving dot display suppl |
Microchip |
88 |
TDA1010 |
6 W audio power amplifier in car applications 10 W audio power amplifier in mains-fed applications |
Philips |
89 |
TDA1010A |
6 W audio power amplifier in car applications 10 W audio power amplifier in mains-fed applications |
Philips |
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