No. |
Part Name |
Description |
Manufacturer |
61 |
IRF823 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
62 |
IRF823 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
63 |
IRF823 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
64 |
IRF823 |
N-channel MOSFET, 450V, 2.2A |
SGS Thomson Microelectronics |
65 |
IRF823 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 2.0A |
Siliconix |
66 |
IRF823FI |
N-channel MOSFET, 450V, 1.5A |
SGS Thomson Microelectronics |
67 |
IRF8252 |
25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed for high efficiency DC-DC converters |
International Rectifier |
68 |
IRF8252PBF-1 |
25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package |
International Rectifier |
69 |
IRF8252TRPBF |
25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed for high efficiency DC-DC converters |
International Rectifier |
70 |
IRF8252TRPBF-1 |
25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package |
International Rectifier |
71 |
IRF82FI |
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
ST Microelectronics |
72 |
IRF830 |
POWER MOSFET |
BayLinear |
73 |
IRF830 |
4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
74 |
IRF830 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
75 |
IRF830 |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
76 |
IRF830 |
4.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET |
Intersil |
77 |
IRF830 |
Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
78 |
IRF830 |
Power Field Effect Transistor |
ON Semiconductor |
79 |
IRF830 |
PowerMOS transistor Avalanche energy rated |
Philips |
80 |
IRF830 |
N-Channel Power MOSFET |
Samsung Electronic |
81 |
IRF830 |
N - CHANNEL 500V - 1.35W - 4.5A - TO-220 PowerMESH MOSFET |
SGS Thomson Microelectronics |
82 |
IRF830 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 4.5A |
Siliconix |
83 |
IRF830 |
N-CHANNEL 500V - 1.35 OHM - 4.5A - TO-220 POWERMESH MOSFET |
ST Microelectronics |
84 |
IRF830 |
500 V,power field effect transistor |
TRANSYS Electronics Limited |
85 |
IRF830 |
N-CHANNEL ENHANCEMENT MODE |
TRSYS |
86 |
IRF830-D |
Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS |
ON Semiconductor |
87 |
IRF8301M |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance. |
International Rectifier |
88 |
IRF8301MTRPBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance. |
International Rectifier |
89 |
IRF8302M |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 31 amperes optimized with low on resistance. |
International Rectifier |
90 |
IRF8302MTR1PBF |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 31 amperes optimized with low on resistance. |
International Rectifier |
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