| No. |
Part Name |
Description |
Manufacturer |
| 61 |
ESM117 |
NPN Power Transistor Epitaxial-Base - High current gain (Darlington) |
SESCOSEM |
| 62 |
ESM118 |
NPN Power Transistor Epitaxial-Base - High current gain (Darlington) |
SESCOSEM |
| 63 |
ESM132 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5294 |
SESCOSEM |
| 64 |
ESM133 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5296 |
SESCOSEM |
| 65 |
ESM134 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5298 |
SESCOSEM |
| 66 |
ESM136 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary ESM135 |
SESCOSEM |
| 67 |
ESM138 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary ESM137 |
SESCOSEM |
| 68 |
ESM140 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary ESM139 |
SESCOSEM |
| 69 |
ESM141 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N6099 |
SESCOSEM |
| 70 |
ESM142 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N6101 |
SESCOSEM |
| 71 |
KTC2120 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS) |
Korea Electronics (KEC) |
| 72 |
KTC2235 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS) |
Korea Electronics (KEC) |
| 73 |
KTC2383 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS) |
Korea Electronics (KEC) |
| 74 |
PEMD12 |
NPN/PNP resistor equipped transistors |
Philips |
| 75 |
PEMH4 |
NPN resistor equipped transistor R1 = 10 kOhm/R2 = open |
Philips |
| 76 |
PUMB11 |
PNP resistor equipped double transistor |
Philips |
| 77 |
SD1070 |
Silicon epitaxial NPN planar high-frequency transistor employs a multi emitter electrode design 28V 13.5W |
SGS Thomson Microelectronics |
| 78 |
STC03DE170HP |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 } |
ST Microelectronics |
| 79 |
STC03DE170HV |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 } |
ST Microelectronics |
| 80 |
STC03DE220HV |
Hybrid emitter switched bipolar transistor ESBT� 2200 V - 3 A - 0.33 � |
ST Microelectronics |
| 81 |
STC04IE170HP |
Monolithic emitter switched bipolar transistor ESBT� 1700 V - 4 A - 0.17 � |
ST Microelectronics |
| 82 |
STC04IE170HV |
Monolithic emitter switched bipolar transistor ESBT� 1700 V - 4 A - 0.17 � |
ST Microelectronics |
| 83 |
STE07DE220 |
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module |
ST Microelectronics |
| 84 |
STE50DE100 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT" 1000 V - 50 A - 0.026 Ohm POWER MODULE |
ST Microelectronics |
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