No. |
Part Name |
Description |
Manufacturer |
61 |
BUT32V |
NPN TRANSISTOR POWER MODULE |
SGS Thomson Microelectronics |
62 |
BUV298AV |
NPN TRANSISTOR POWER MODULE |
SGS Thomson Microelectronics |
63 |
BUV298AV |
NPN TRANSISTOR POWER MODULE |
SGS Thomson Microelectronics |
64 |
BUV298AV |
NPN TRANSISTOR POWER MODULE |
ST Microelectronics |
65 |
BUV298V |
NPN TRANSISTOR POWER MODULE |
SGS Thomson Microelectronics |
66 |
BUV98AV |
NPN TRANSISTOR POWER MODULE |
SGS Thomson Microelectronics |
67 |
BUV98V |
NPN TRANSISTOR POWER MODULE |
SGS Thomson Microelectronics |
68 |
BUV98V |
NPN TRANSISTOR POWER MODULE |
ST Microelectronics |
69 |
D1950 |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
70 |
DXT2010P5 |
60V NPN MEDIUM POWER TRANSISTOR PowerDI�5 |
Diodes |
71 |
DXT2010P5-13 |
60V NPN MEDIUM POWER TRANSISTOR PowerDI�5 |
Diodes |
72 |
DXT2013P5 |
100V PNP MEDIUM POWER TRANSISTOR PowerDI�5 |
Diodes |
73 |
DXT2013P5-13 |
100V PNP MEDIUM POWER TRANSISTOR PowerDI�5 |
Diodes |
74 |
DXT2014P5 |
140V PNP MEDIUM POWER TRANSISTOR PowerDI�5 |
Diodes |
75 |
DXT2014P5-13 |
140V PNP MEDIUM POWER TRANSISTOR PowerDI�5 |
Diodes |
76 |
DXT458P5 |
NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR PowerDI�5 |
Diodes |
77 |
DXT458P5-13 |
NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR PowerDI�5 |
Diodes |
78 |
DXT5551P5 |
160V NPN HIGH VOLTAGE TRANSISTOR PowerDI�5 |
Diodes |
79 |
DXT5551P5-13 |
160V NPN HIGH VOLTAGE TRANSISTOR PowerDI�5 |
Diodes |
80 |
DXTN857P5 |
300V NPN HIGH CURRENT TRANSISTOR POWERDI�5 |
Diodes |
81 |
DXTP03200BP5 |
200V PNP HIGH VOLTAGE TRANSISTOR PowerDI�5 |
Diodes |
82 |
DXTP03200BP5-13 |
200V PNP HIGH VOLTAGE TRANSISTOR PowerDI�5 |
Diodes |
83 |
DXTP560BP5 |
500V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR POWERDI�5 |
Diodes |
84 |
DXTP560BP5-13 |
500V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR POWERDI�5 |
Diodes |
85 |
HUF75333G3 |
Power dissipation 111 W Transistor polarity N Channel Current Id cont. 56 A Pitch lead 5.45 mm Voltage Vds max 55 V Resistance Rds on 0.016 R Temperature current 25 ?C Temperature power 25 ?C |
Fairchild Semiconductor |
86 |
MJ802 |
hfe min 25 Transistor polarity NPN Current Ic continuous max 30 A Voltage Vceo 90 V Current Ic (hfe) 7.5 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
87 |
MJL21196 |
Transistor Power |
ON Semiconductor |
88 |
MMSF3350-D |
WaveFETE HDTMOSE Single N-Channel Field Effect Transistor Power Surface Mount Products |
ON Semiconductor |
89 |
NDH833N |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.1 A Voltage Vgs th max. 2.7 V Voltage Vds max 20 V |
Fairchild Semiconductor |
90 |
NDH8436 |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 5.8 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V |
Fairchild Semiconductor |
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