No. |
Part Name |
Description |
Manufacturer |
61 |
1N8156E3 |
Low Capacitance TVS |
Microsemi |
62 |
1N8157 |
Low Capacitance TVS |
Microsemi |
63 |
1N8157E3 |
Low Capacitance TVS |
Microsemi |
64 |
1N8158 |
Low Capacitance TVS |
Microsemi |
65 |
1N8158E3 |
Low Capacitance TVS |
Microsemi |
66 |
1N8159 |
Low Capacitance TVS |
Microsemi |
67 |
1N8159E3 |
Low Capacitance TVS |
Microsemi |
68 |
1N8160 |
Low Capacitance TVS |
Microsemi |
69 |
1N8160E3 |
Low Capacitance TVS |
Microsemi |
70 |
1N8161 |
Low Capacitance TVS |
Microsemi |
71 |
1N8161US |
Low Capacitance TVS |
Microsemi |
72 |
1PS79SB17 |
4 V, 30 mA low capacitance Schottky barrier diode |
Nexperia |
73 |
1S145 |
Variable capacitance diode |
TOSHIBA |
74 |
1S1650 |
Silicon planar variable capacitance diode, suitable for Radio Tunner, Multiplier and Oscillator |
TOSHIBA |
75 |
1S1651 |
Silicon planar variable capacitance diode, suitable for Radio Tunner, Multiplier and Oscillator |
TOSHIBA |
76 |
1S1658 |
Variable capacitance diode |
TOSHIBA |
77 |
1S1658 |
Silicon epitaxial planar variable capacitance diode, FM AFC applications |
TOSHIBA |
78 |
1S2094 |
Silicon epitaxial planar type variable capacitance diode. |
Panasonic |
79 |
1S2094 |
Variable capacitance diode |
TOSHIBA |
80 |
1S2094 |
VARIABLE CAPACITANCE DIODE |
TOSHIBA |
81 |
1S2236 |
Silicon epitaxial planar type variable capacitance diode. |
Panasonic |
82 |
1S2236 |
Variable capacitance diode |
TOSHIBA |
83 |
1S2236 |
SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE |
TOSHIBA |
84 |
1S48 |
Variable capacitance diode |
TOSHIBA |
85 |
1S49 |
Variable capacitance diode |
TOSHIBA |
86 |
1S85 |
Silicon Diffused Junction Diode, Varicap - Voltage Variable Capacitance |
Hitachi Semiconductor |
87 |
1S86 |
Variable capacitance diode |
TOSHIBA |
88 |
1SV100 |
Silicon epitaxial planar type variable capacitance diode. |
Panasonic |
89 |
1SV100 |
SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE |
TOSHIBA |
90 |
1SV101 |
Silicon epitaxial planar type variable capacitance diode. |
Panasonic |
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