| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1920AB60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 62 |
1920CD35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 63 |
1920CD60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 64 |
1N38AH |
Germanium Point Contact for Limitter Circuit, Small Capacitive Rectifier |
Hitachi Semiconductor |
| 65 |
23A003 |
0.3 W, 15 V, 2300 MHz common emitter transistor |
GHz Technology |
| 66 |
23A005 |
0.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
| 67 |
23A008 |
0.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
| 68 |
23A017 |
1.7 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
| 69 |
23A025 |
2.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
| 70 |
28222-13 |
ATM Transmitter/Receiver with UTOPIA Interface |
Conexant |
| 71 |
28222-14 |
ATM Transmitter/Receiver with UTOPIA Interface |
Conexant |
| 72 |
28233-11 |
ATM Transmitter/Receiver with UTOPIA Interface |
Conexant |
| 73 |
28L202A1A |
Dual universal asynchronous receiver/transmitter (DUART). |
Philips |
| 74 |
28L202A1B |
Dual universal asynchronous receiver/transmitter (DUART). |
Philips |
| 75 |
2N1073 |
PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 40V |
Motorola |
| 76 |
2N1073A |
PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 80V |
Motorola |
| 77 |
2N1073B |
PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 120V |
Motorola |
| 78 |
2N3375 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
| 79 |
2N3553 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
| 80 |
2N3632 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
| 81 |
2N3866 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 82 |
2N3903 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 83 |
2N3904 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 84 |
2N3905 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 85 |
2N3906 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 86 |
2N4123 |
General purpose transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 87 |
2N4124 |
General purpose transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 88 |
2N4125 |
Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 89 |
2N4126 |
Amplifier transistor. Collector-emitter voltage: Vceo = -25V. Collector-base voltage: Vcbo = -25V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 90 |
2N4400 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| | | |
