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Datasheets for ITTER

Datasheets found :: 5806
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No. Part Name Description Manufacturer
61 1920AB4 4 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
62 1920AB60 60 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
63 1920CD35 35 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
64 1920CD60 60 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
65 1N38AH Germanium Point Contact for Limitter Circuit, Small Capacitive Rectifier Hitachi Semiconductor
66 23A003 0.3 W, 15 V, 2300 MHz common emitter transistor GHz Technology
67 23A005 0.5 W, 20 V, 2300 MHz common emitter transistor GHz Technology
68 23A008 0.5 W, 20 V, 2300 MHz common emitter transistor GHz Technology
69 23A017 1.7 W, 20 V, 2300 MHz common emitter transistor GHz Technology
70 23A025 2.5 W, 20 V, 2300 MHz common emitter transistor GHz Technology
71 28222-13 ATM Transmitter/Receiver with UTOPIA Interface Conexant
72 28222-14 ATM Transmitter/Receiver with UTOPIA Interface Conexant
73 28233-11 ATM Transmitter/Receiver with UTOPIA Interface Conexant
74 28L202A1A Dual universal asynchronous receiver/transmitter (DUART). Philips
75 28L202A1B Dual universal asynchronous receiver/transmitter (DUART). Philips
76 2N1073 PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 40V Motorola
77 2N1073A PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 80V Motorola
78 2N1073B PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 120V Motorola
79 2N3375 Silicon NPN RF Power Transistor, overlay emitter electrode construction RCA Solid State
80 2N3375 Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 28 V supply voltage VALVO
81 2N3553 Silicon NPN RF Power Transistor, overlay emitter electrode construction RCA Solid State
82 2N3553 Silicon NPN planar epitaxial transistor for transmitter applications at 175 MHz with 28 V supply voltage VALVO
83 2N3632 Silicon NPN RF Power Transistor, overlay emitter electrode construction RCA Solid State
84 2N3632 Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 28 V supply voltage VALVO
85 2N3866 40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note RCA Solid State
86 2N3866 Silicon NPN planar epitaxial transistor for driver stages in transmitters up to 400 MHz at 28 V supply voltage VALVO
87 2N3903 General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
88 2N3904 General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
89 2N3905 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. USHA India LTD
90 2N3906 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. USHA India LTD


Datasheets found :: 5806
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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