No. |
Part Name |
Description |
Manufacturer |
61 |
2N5445 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
62 |
2N5446 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
63 |
2N6072 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
64 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
65 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
66 |
2N6073 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
Motorola |
67 |
2N6074 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
68 |
2N6074A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
69 |
2N6074B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
70 |
2N6075 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
Motorola |
71 |
4TPB220ML |
N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages |
National Semiconductor |
72 |
5962R-0323501QUA |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
73 |
5962R-0323501QUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
74 |
5962R-0323501QUX |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
75 |
5962R-0323501VUA |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
76 |
5962R-0323501VUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
77 |
5962R-0323501VUX |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
78 |
5962R-0323502QUA |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
79 |
5962R-0323502QUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
80 |
5962R-0323502QUX |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
81 |
5962R-0323502VUA |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
82 |
5962R-0323502VUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
83 |
5962R-0323502VUX |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
84 |
5962R-TBD01QTBDA |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
85 |
5962R-TBD01QTBDC |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
86 |
5962R-TBD01QTBDX |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
87 |
5962R-TBD01VTBDA |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
88 |
5962R-TBD01VTBDC |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
89 |
5962R-TBD01VTBDX |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
90 |
6MV2200WG |
N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages |
National Semiconductor |
| | | |