No. |
Part Name |
Description |
Manufacturer |
61 |
2N2029 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
62 |
2N2030 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
63 |
2N2802 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
64 |
2N2803 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
65 |
2N2804 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
66 |
2N2805 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
67 |
2N2806 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
68 |
2N2807 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
69 |
2N3904 |
NPN Silicon Transistor (General small signal application) |
AUK Corp |
70 |
2N3906 |
PNP Silicon Transistor (General small signal application Switching application) |
AUK Corp |
71 |
2N4441 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
72 |
2N4442 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
73 |
2N4443 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
74 |
2N4444 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
75 |
2N456A |
PNP high-current germanium power transistor for industrial applications |
Motorola |
76 |
2N457A |
PNP high-current germanium power transistor for industrial applications |
Motorola |
77 |
2N458A |
PNP high-current germanium power transistor for industrial applications |
Motorola |
78 |
2N460 |
PNP germanium transistor for general purpose industrial applications |
Motorola |
79 |
2N461 |
PNP germanium transistor for general purpose industrial applications |
Motorola |
80 |
2N554 |
PNP germanium power transistor for non-critical applications requiring economical components |
Motorola |
81 |
2N555 |
PNP germanium power transistor for non-critical applications requiring economical components |
Motorola |
82 |
2N5664SMD |
NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS |
SemeLAB |
83 |
2SA1091 |
Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
84 |
2SA1091 |
Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
85 |
2SA1384 |
Transistor Silicon PNP Triple Diffused Type (PCT process) HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
86 |
2SA1384 |
Transistor Silicon PNP Triple Diffused Type (PCT process) HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
87 |
2SA1432 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS. |
TOSHIBA |
88 |
2SA1721 |
Transistor Silicon PNP Epitaxial Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
89 |
2SA1721 |
Transistor Silicon PNP Epitaxial Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
90 |
2SC2352 |
Typical application of 2SC2352 to VHF Tuner mixer circuit of high conversion Gain - application note |
NEC |
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