DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for LOY

Datasheets found :: 836
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |
No. Part Name Description Manufacturer
61 1N4005 Rectifiers(Rugged glass package, using a high temperature alloyed construction) Philips
62 1N4005G Rectifiers(Rugged glass package, using a high temperature alloyed construction) Philips
63 1N4006 Rectifiers(Rugged glass package, using a high temperature alloyed construction) Philips
64 1N4006G Rectifiers(Rugged glass package, using a high temperature alloyed construction) Philips
65 1N4007 Rectifiers(Rugged glass package, using a high temperature alloyed construction) Philips
66 1N4007G Rectifiers(Rugged glass package, using a high temperature alloyed construction) Philips
67 1N4370 Silicon alloy junction voltage regulator diodes 2.4V 400mW, available according to MIL-S19500/127 Texas Instruments
68 1N4370A Silicon alloy junction voltage regulator diodes 2.4V 400mW, available according to MIL-S19500/127 Texas Instruments
69 1N4371 Silicon alloy junction voltage regulator diodes 2.7V 400mW, available according to MIL-S19500/127 Texas Instruments
70 1N4371A Silicon alloy junction voltage regulator diodes 2.7V 400mW, available according to MIL-S19500/127 Texas Instruments
71 1N4372 Silicon alloy junction voltage regulator diodes 3.0V 400mW, available according to MIL-S19500/127 Texas Instruments
72 1N4372A Silicon alloy junction voltage regulator diodes 3.0V 400mW, available according to MIL-S19500/127 Texas Instruments
73 1NE11 Silicon alloy-diffused junction avalanche rectifier 1A 1000V TOSHIBA
74 1QE11 Silicon alloy-diffused junction avalanche rectifier 1A 1200V TOSHIBA
75 1S144 Silicon Alloy junction meter protection diode TOSHIBA
76 1S689 Germanium Alloyed Junction Diode, VR(peak) -200V, intended for use in TV Horizontal Deflection Dampar Hitachi Semiconductor
77 1S689A Germanium Alloyed Junction Diode, VR(peak) -270V, intended for use in TV Horizontal Deflection Dampar Hitachi Semiconductor
78 1S752H Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source Hitachi Semiconductor
79 1S753H Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source Hitachi Semiconductor
80 1S754H Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source Hitachi Semiconductor
81 1S755H Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source Hitachi Semiconductor
82 250UC11 Silicon alloy-diffused junction high-current rectifier 1600V 250A TOSHIBA
83 25FXF11 Silicon Alloy-Diffused junction avalanche rectifier 25A 3000V 8kW TOSHIBA
84 25LF11 Silicon Alloy-Diffused junction avalanche rectifier 25A 800V 12kW TOSHIBA
85 25NF11 Silicon Alloy-Diffused junction avalanche rectifier 25A 1000V 12kW TOSHIBA
86 25QF11 Silicon Alloy-Diffused junction avalanche rectifier 25A 1200V 12kW TOSHIBA
87 2N1024 PNP planar for alloy transistor replacements - silicon Sprague
88 2N1025 PNP planar for alloy transistor replacements - silicon Sprague
89 2N1026 PNP planar for alloy transistor replacements - silicon Sprague
90 2N1027 PNP planar for alloy transistor replacements - silicon Sprague


Datasheets found :: 836
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



© 2024 - www Datasheet Catalog com