No. |
Part Name |
Description |
Manufacturer |
61 |
HYB314171BJ-50 |
3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
Siemens |
62 |
HYB314171BJ-60 |
256k x 16 Bit FPM DRAM 3.3 V 60 ns |
Infineon |
63 |
HYB314171BJ-60 |
3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
Siemens |
64 |
HYB314171BJ-70 |
256k x 16 Bit FPM DRAM 3.3 V 70 ns |
Infineon |
65 |
HYB314171BJ-70 |
3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
Siemens |
66 |
HYB314171BJL-50 |
3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
Siemens |
67 |
HYB314171BJL-60 |
3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
Siemens |
68 |
HYB314171BJL-70 |
3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
Siemens |
69 |
HYB314175BJ-50 |
256k x 16 Bit EDO DRAM 3.3 V 50 ns |
Infineon |
70 |
HYB314175BJ-50 |
-3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
71 |
HYB314175BJ-50 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
72 |
HYB314175BJ-50 |
-3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
73 |
HYB314175BJ-50 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
74 |
HYB314175BJ-55 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
75 |
HYB314175BJ-60 |
256k x 16 Bit EDO DRAM 3.3 V 60 ns |
Infineon |
76 |
HYB314175BJ-60 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
77 |
HYB314175BJL-50 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
78 |
HYB314175BJL-55 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
79 |
HYB314175BJL-60 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
80 |
HYB314400BJ-50 |
1M x 4 Bit FPM DRAM 3.3 V 50 ns |
Infineon |
81 |
HYB314400BJ-60 |
1M x 4 Bit FPM DRAM 3.3 V 60 ns |
Infineon |
82 |
HYB314405BJ-50 |
1M x 4 Bit EDO DRAM 3.3 V 50 ns |
Infineon |
83 |
HYB314405BJ-60 |
1M x 4 Bit EDO DRAM 3.3 V 60 ns |
Infineon |
84 |
HYB314405BJ-70 |
1M x 4 Bit EDO DRAM 3.3 V 70 ns |
Infineon |
85 |
IDT71V432S5PFI |
32K x 32 CacheRAM 3.3V Synchronous SRAM Burst Counter Single Cycle Deselect |
IDT |
86 |
IFC125-42-3 |
AC/DC open frame. 125 Watts. Output 1: Vnom 3.3V, Imax 10.0A. Output 2: Vnom 5.0V, Imax 15.0A. Output 3: Vnom 12.0V, Imax 5.0A. Output 4: Vnom -12.0V, Imax 0.5A. |
International Power Sources |
87 |
IS41LV32256-28PQ |
256K x 32(8-MBIT) edo dynamic RAM 3.3V 100/83/66MHz |
Integrated Silicon Solution Inc |
88 |
IS41LV32256-28TQ |
256K x 32(8-MBIT) edo dynamic RAM 3.3V 100/83/66MHz |
Integrated Silicon Solution Inc |
89 |
IS41LV32256-30PQ |
256K x 32(8-MBIT) edo dynamic RAM 3.3V 100/83/66MHz |
Integrated Silicon Solution Inc |
90 |
IS41LV32256-30TQ |
256K x 32(8-MBIT) edo dynamic RAM 3.3V 100/83/66MHz |
Integrated Silicon Solution Inc |
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