| No. |
Part Name |
Description |
Manufacturer |
| 61 |
BM60210FV-CE2 |
1200V High Voltage High & Low-side, Gate Driver |
ROHM |
| 62 |
CLM6000 |
LED PHOTOCONDUCTOR ISOLATORS |
Clairex Technologies |
| 63 |
CM600DU-24F |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 64 |
CM600DU-24F |
Dual IGBTMOD 600 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 65 |
CM600DU-24NF |
HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 66 |
CM600DU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 67 |
CM600DU-5F |
Dual IGBTMOD 600 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 68 |
CM600DY-12NF |
HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 69 |
CM600DY-24A |
HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 70 |
CM600DY-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 71 |
CM600DY-34H |
HIGH POWER SWITCHING USE INSULATED TYPE |
Powerex Power Semiconductors |
| 72 |
CM600E2Y-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 73 |
CM600E2Y-34H |
HIGH POWER SWITCHING USE INSULATED TYPE |
Powerex Power Semiconductors |
| 74 |
CM600HA-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 75 |
CM600HA-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 76 |
CM600HA-12H |
Single IGBTMOD 600 Amperes/600 Volts |
Powerex Power Semiconductors |
| 77 |
CM600HA-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 78 |
CM600HA-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 79 |
CM600HA-24H |
Single IGBTMOD 600 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 80 |
CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 81 |
CM600HA-28H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 82 |
CM600HA-28H |
Single IGBTMOD 600 Amperes/1400 Volts |
Powerex Power Semiconductors |
| 83 |
CM600HA-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 84 |
CM600HA-5F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 85 |
CM600HA-5F |
Trench Gate Design Single IGBTMOD�� 600 Amperes/250 Volts |
Powerex Power Semiconductors |
| 86 |
CM600HA24H |
Single IGBTMOD H-Series Module 600 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 87 |
CM600HB-90H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 88 |
CM600HB-90H |
Single IGBTMOD�� HVIGBT 600 Amperes/4500 Volts |
Powerex Power Semiconductors |
| 89 |
CM600HN-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 90 |
CM600HU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
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