No. |
Part Name |
Description |
Manufacturer |
61 |
1N4603 |
Microwave Mixer f=16,000 MHz, NF=9.5 dB |
Motorola |
62 |
1N4604 |
Microwave Mixer f=16,000 MHz, NF=8.8 dB |
Motorola |
63 |
1N4605 |
Microwave Mixer f=16,000 MHz, NF=8.0 dB |
Motorola |
64 |
1N53 |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
65 |
1N53A |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
66 |
1N53B |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
67 |
1N53C |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
68 |
1N53D |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
69 |
1N78D |
Mixer diode |
mble |
70 |
1N78DR |
Mixer diode |
mble |
71 |
1N78E |
Mixer diode |
mble |
72 |
1N78ER |
Mixer diode |
mble |
73 |
1N82 |
Silicon Diode - Microwave Mixer - to 1,000 MHz; NF=16 to 14 dB |
Motorola |
74 |
1N82A |
Silicon Diode - Microwave Mixer - to 1,000 MHz; NF=16 to 14 dB |
Motorola |
75 |
1N82AG |
Silicon Diode - Microwave Mixer - to 1,000 MHz; NF=16 to 14 dB |
Motorola |
76 |
1N82G |
Silicon Diode - Microwave Mixer - to 1,000 MHz; NF=16 to 14 dB |
Motorola |
77 |
1S-144 |
Mixer Protection diode |
TOSHIBA |
78 |
1S144 |
Mixer Protection diode |
TOSHIBA |
79 |
1S1549 |
Silicon epitaxial planar schottky barrier mixer diode |
TOSHIBA |
80 |
1S1721 |
Mixer Diode |
TOSHIBA |
81 |
1S1722 |
Mixer Diode |
TOSHIBA |
82 |
1S1807 |
Mixer Diode |
TOSHIBA |
83 |
1S2187 |
Silicon epitaxial schottky barrier mixer diode, UHF Mixer Application |
TOSHIBA |
84 |
1S2187 |
Silicon epitaxial schottky barrier mixer diode, UHF Mixer Application |
TOSHIBA |
85 |
1S750 |
Silicon Point Contact Epitaxial, intended for use in UHF Tuner Mixer |
Hitachi Semiconductor |
86 |
1SS101 |
Silicon Mixer Diode |
NEC |
87 |
1SS16 |
Silicon UHF Detector & Mixer Diode |
NEC |
88 |
1SS237 |
UHF Detector & Mixer Diode |
NEC |
89 |
1SS237(1) |
UHF Detector & Mixer Diode |
NEC |
90 |
1SS242 |
Silicon Epitaxial Schottky Barrier Type Diode for UHF band mixer applications, marking S2 |
TOSHIBA |
| | | |