| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2N1864 |
MADT® PNP germanium transistor communication types |
Sprague |
| 62 |
2N1865 |
MADT® PNP germanium transistor communication types |
Sprague |
| 63 |
2N1866 |
MADT® PNP germanium transistor communication types |
Sprague |
| 64 |
2N1867 |
MADT® PNP germanium transistor communication types |
Sprague |
| 65 |
2N1868 |
MADT® PNP germanium transistor communication types |
Sprague |
| 66 |
2N3118 |
Triple-diffused planar transistor of the silicon NPN type intended for use in RF amplifiers in military and industrial HF and VHF communication equipment |
RCA Solid State |
| 67 |
2N4428 |
Epitaxial planar NPN transistor designed for VHF-UHF class C amplifier output stages in military an industrial communications applications |
SGS-ATES |
| 68 |
2N499 |
MADT® PNP communications types - germanium transistor |
Sprague |
| 69 |
2N499A |
MADT® PNP communications types - germanium transistor |
Sprague |
| 70 |
2N502 |
MADT® PNP communications types - germanium transistor |
Sprague |
| 71 |
2N502A |
MADT® PNP communications types - germanium transistor |
Sprague |
| 72 |
2N502B |
MADT® PNP communications types - germanium transistor |
Sprague |
| 73 |
2N503 |
MADT® PNP communications types - germanium transistor |
Sprague |
| 74 |
2N504 |
MADT® PNP communications types - germanium transistor |
Sprague |
| 75 |
2N5179 |
Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment |
RCA Solid State |
| 76 |
2N588 |
MADT® PNP communications types - germanium transistor |
Sprague |
| 77 |
2N6080 |
V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistor |
SGS Thomson Microelectronics |
| 78 |
2N6081 |
V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistor |
SGS Thomson Microelectronics |
| 79 |
2N6082 |
V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistor |
SGS Thomson Microelectronics |
| 80 |
2N6082 |
VHF Communications Transistor |
ST Microelectronics |
| 81 |
2N6083 |
V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistor |
SGS Thomson Microelectronics |
| 82 |
2N6084 |
V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistor |
SGS Thomson Microelectronics |
| 83 |
2N6198 |
12 W, 28 V, 100-200 MHz, VHF communication |
Acrian |
| 84 |
2N6199 |
25 W, 28 V, 100-200 MHz, VHF communication |
Acrian |
| 85 |
2SC5289-T1 |
Mobile communications transmission power amplifier |
NEC |
| 86 |
3N209 |
Dual-gate MOSFET UHF communications N-Channel - Depletion |
Motorola |
| 87 |
3N209 |
N-channel-defletion dual-gate MOSFET UHF communications. |
Motorola |
| 88 |
485ELC |
Max voltage:20V; 250mA; high speed ethernet data line protector. For ethernet- 10/100 base T, catagory 5 systems, RS-485 serial communication lines, ISDN equipment/systems, video transmission systems |
Protek Devices |
| 89 |
5962-9855001QXA |
PLLatinum 1.2 GHz Frequency Synthesizer for RF Personal Communications |
National Semiconductor |
| 90 |
5962-9855002QXA |
PLLatinum 2.5 GHz Frequency Synthesizer for RF Personal Communications |
National Semiconductor |
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