| No. |
Part Name |
Description |
Manufacturer |
| 61 |
DEMO-MGA8756-3 |
DEMO-MGA8756-3 · Demonstration circuit board for MGA-87563 |
Agilent (Hewlett-Packard) |
| 62 |
DEMO-MGA8756-3 |
DEMO-MGA8756-3 · Demonstration circuit board for MGA-87563 |
Agilent (Hewlett-Packard) |
| 63 |
INEMO-ENG-M1LI3 |
iNEMO engine lite sensor fusion algorithm evaluation source code for iNEMO-M1 |
ST Microelectronics |
| 64 |
INEMO-ENG-M1LI3 |
iNEMO engine lite sensor fusion algorithm evaluation source code for iNEMO-M1 |
ST Microelectronics |
| 65 |
iNEMO-Eng_PW8 |
PW8 engine PRO - supports Win8 sensors |
ST Microelectronics |
| 66 |
INEMO-M1 |
iNEMO system on board |
ST Microelectronics |
| 67 |
iNEMOEng_M1LI3 |
iNEMO engine lite sensor fusion algorithm evaluation source code for iNEMO-M1 |
ST Microelectronics |
| 68 |
IRFG110 |
100V Quad N-Channel MOSFET in a MO-036AB package |
International Rectifier |
| 69 |
IRFG110(N) |
100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
| 70 |
IRFG5110 |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
| 71 |
IRFG5110(N) |
100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
| 72 |
IRFG5110(P) |
-100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
| 73 |
IRFG5210 |
200V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
| 74 |
IRFG5210(N) |
200V Single N-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
| 75 |
IRFG5210(P) |
200V Single P-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
| 76 |
IRFG6110 |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
| 77 |
IRFG6110(N) |
100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
| 78 |
IRFG6110(P) |
-100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
| 79 |
IRFG9110 |
100V Quad P-Channel MOSFET in a MO-036AB package |
International Rectifier |
| 80 |
IRFG9110(P) |
-100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
| 81 |
IRHG3110 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) |
International Rectifier |
| 82 |
IRHG4110 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) |
International Rectifier |
| 83 |
IRHG53110 |
100V 300kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package |
International Rectifier |
| 84 |
IRHG53110SCS |
100V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package |
International Rectifier |
| 85 |
IRHG563110 |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
| 86 |
IRHG563110(N) |
100V 300kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package |
International Rectifier |
| 87 |
IRHG563110(P) |
-100V 300kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package |
International Rectifier |
| 88 |
IRHG567110 |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
| 89 |
IRHG567110(N) |
100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package |
International Rectifier |
| 90 |
IRHG567110(P) |
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package |
International Rectifier |
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