| No. |
Part Name |
Description |
Manufacturer |
| 61 |
CF001-03 |
0.8 dB, 12 GHz, GaAs pseudomorphic HEMT and MESFET chip |
CELERITEK |
| 62 |
CF003 |
CF003 SERIES GaAs PSEUDOMORPHIC HEMT AND MESFET CHIPS |
CELERITEK |
| 63 |
CF003-01 |
CF003 SERIES GaAs PSEUDOMORPHIC HEMT AND MESFET CHIPS |
CELERITEK |
| 64 |
CF003-02 |
CF003 SERIES GaAs PSEUDOMORPHIC HEMT AND MESFET CHIPS |
CELERITEK |
| 65 |
CF003-03 |
CF003 SERIES GaAs PSEUDOMORPHIC HEMT AND MESFET CHIPS |
CELERITEK |
| 66 |
CF004-01 |
2.2 dB, 18 GHz, GaAs pseudomorphic HEMT and MESFET chip |
CELERITEK |
| 67 |
CF004-02 |
1.8 dB, 18 GHz, GaAs pseudomorphic HEMT and MESFET chip |
CELERITEK |
| 68 |
CF004-03 |
1.5 dB, 18 GHz, GaAs pseudomorphic HEMT and MESFET chip |
CELERITEK |
| 69 |
LT104V3-100 |
THE COLOR ACTIVE MATRIX TFT (THIN FILM TRANSISTOR) LIQUID CRYSTAL DISPLAY USING AMORPHOUS SILICON TFTS AS SWITCHING DEVICES |
Samsung Electronic |
| 70 |
LT104V3-100-01 |
THE COLOR ACTIVE MATRIX TFT (THIN FILM TRANSISTOR) LIQUID CRYSTAL DISPLAY USING AMORPHOUS SILICON TFTS AS SWITCHING DEVICES |
Samsung Electronic |
| 71 |
LT104V3-102 |
COLOR ACTIVE MATRIX TFT LIQUID CTYSTAL DISPLAY USING AMORPHOUS SILICON TFTS AS SWITCHING DEVICES |
Samsung Electronic |
| 72 |
LT104V3-102-01 |
COLOR ACTIVE MATRIX TFT LIQUID CTYSTAL DISPLAY USING AMORPHOUS SILICON TFTS AS SWITCHING DEVICES |
Samsung Electronic |
| 73 |
MYB-1206 |
High attenuation effect against high voltage pulse noise by amorphous core |
DENSEI-LAMBDA |
| 74 |
MYB-1206-33 |
High attenuation effect against high voltage pulse noise by amorphous core |
DENSEI-LAMBDA |
| 75 |
MYB-1210-33 |
High attenuation effect against high voltage pulse noise by amorphous core |
DENSEI-LAMBDA |
| 76 |
MYB-1220-33 |
High attenuation effect against high voltage pulse noise by amorphous core |
DENSEI-LAMBDA |
| 77 |
MYB-1230-33 |
High attenuation effect against high voltage pulse noise by amorphous core |
DENSEI-LAMBDA |
| 78 |
NE24283 |
Ultra low noise pseudomorphic HJ FET (space qualified). |
NEC |
| 79 |
NE32400M |
Ultra low noise pseudomorphic HJ FET. IDSS range 45-70 mA. |
NEC |
| 80 |
NE32400N |
Ultra low noise pseudomorphic HJ FET. |
NEC |
| 81 |
NE32484AS |
Ultra low noise pseudomorphic HJ FET. |
NEC |
| 82 |
NE32584C-S |
Ultra low noise pseudomorphic HJ FET. |
NEC |
| 83 |
NE32684A |
Ultra Low Noise Pseudomorphic HJ FET |
NEC |
| | | |
