No. |
Part Name |
Description |
Manufacturer |
61 |
IXKF40N60SCD1 |
CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PAC |
IXYS Corporation |
62 |
LMN200B01 |
200 mA LOAD SWITCH PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH PULL DOWN RESISTOR |
Diodes |
63 |
LMN200B02 |
200 mA LOAD SWITCH PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH GATE PULL DOWN RESISTOR |
Diodes |
64 |
LMN400B01 |
400mA LOAD SWITCH PNP TRANSISTOR AND N-MOSFET WITH GATE PULL-DOWN RESISTOR |
Diodes |
65 |
MMDFS2P102 |
P-Channel Power MOSFET with Schottky Rectifier 20 Volts |
Motorola |
66 |
NIC9N05TS1 |
Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection |
ON Semiconductor |
67 |
NID9N05CL |
Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package |
ON Semiconductor |
68 |
NID9N05CLT4 |
Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package |
ON Semiconductor |
69 |
NID9N05CLT4G |
Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package |
ON Semiconductor |
70 |
NIF9N05CL |
Protected Power MOSFET 2.6 A, 52V N-Ch Logic Level, Clamped MOSFET w/ESD Protection |
ON Semiconductor |
71 |
NIF9N05CLT1 |
Protected Power MOSFET 2.6 A, 52V N-Ch Logic Level, Clamped MOSFET w/ESD Protection |
ON Semiconductor |
72 |
NIF9N05CLT3 |
Protected Power MOSFET 2.6 A, 52V N-Ch Logic Level, Clamped MOSFET w/ESD Protection |
ON Semiconductor |
73 |
NILMS4501N |
Power MOSFET with Current Mirror FET 24V, 9.5 A, N-Channel, ESD Protected, 1:250 Current Mirror, SO-8 Lead Less QFN |
ON Semiconductor |
74 |
NUS5530MN |
Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor |
ON Semiconductor |
75 |
PB-IRF6609 |
Leaded A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
76 |
PB-IRF6613 |
Leaded A 40V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
77 |
PB-IRF6618 |
Leaded A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
78 |
PB-IRF6678 |
Leaded A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes. |
International Rectifier |
79 |
PB-IRF6691 |
Leaded A 20V Single N-Channel HEXFET Power MOSFET with integrated monolithic Schottky diode in a DirectFET MT package rated at 180 amperes. |
International Rectifier |
80 |
PMC85XP |
30 V P-channel MOSFET with pre-biased NPN transistor |
Nexperia |
81 |
PMC85XP |
30 V P-channel MOSFET with pre-biased NPN transistor |
NXP Semiconductors |
82 |
PSMN4R8-100PSE |
N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 package |
Nexperia |
83 |
PSMN7R8-100PSE |
N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in TO220 package |
Nexperia |
84 |
SI1410EDH |
N-Channel 20-V (D-S) MOSFET with Copper Leadframe |
Vishay |
85 |
SI1413EDH |
P-Channel 20-V (D-S) MOSFET with Copper Leadframe |
Vishay |
86 |
SI1904EDH |
N-Channel 25-V (D-S) MOSFET with Copper Leadframe |
Vishay |
87 |
SI1912EDH |
N-Channel 20-V (D-S) MOSFET with Copper Leadframe |
Vishay |
88 |
SI3812DV |
N-Channel 20-V (D-S) MOSFET with Schottky Diode |
Vishay |
89 |
SI3851DV |
P-Channel 30-V (D-S) Rated MOSFET with Schottky Diode |
Vishay |
90 |
SI3853DV |
P-Channel 20-V (D-S) Rated MOSFET with Schottky Diode |
Vishay |
| | | |