| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2SC1622A-T2B |
Low-frequency high-gain amplification silicon Tr. |
NEC |
| 62 |
2SC2298 |
HIGH GAIN AMPLIFIER |
Hitachi Semiconductor |
| 63 |
2SC3381 |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE/ CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS) |
TOSHIBA |
| 64 |
2SC3651 |
High Gain, Low Frequency, General Purpose NPN Amplifier Transistor |
ON Semiconductor |
| 65 |
2SC4180 |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 66 |
2SC4703 |
MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 67 |
2SC5336 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 68 |
2SC5337 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 69 |
2SC5338 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 70 |
2SC5369-T1 |
Microwave noise reduced amplifier/high gain amplifier |
NEC |
| 71 |
2SC5408 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 72 |
2SC5408-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 73 |
2SC5409 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 74 |
2SC5409-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 75 |
2SC5507 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 76 |
2SC5507-T2 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 77 |
2SC5508 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 78 |
2SC5508-T2 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 79 |
2SC5606 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE � HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD |
NEC |
| 80 |
2SC5606-T1 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE � HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD |
NEC |
| 81 |
2SD1383KT146B |
NPN High gain amplifier Transistor (Darlington) |
ROHM |
| 82 |
2SD1834T100 |
NPN High gain amplifier Transistor (Darlington) |
ROHM |
| 83 |
2SD2142KT146 |
NPN High gain amplifier Transistor (Darlington) |
ROHM |
| 84 |
3606 |
Digitally-Controlled Programmable Gain Instrumentation Amplifier |
Texas Instruments |
| 85 |
3606BG |
Digitally-Controlled Programmable Gain Instrumentation Amplifier |
Texas Instruments |
| 86 |
3626 |
Low Drift INSTRUMENTATION AMPLIFIER |
Burr Brown |
| 87 |
3626AP |
Low Drift INSTRUMENTATION AMPLIFIER |
Burr Brown |
| 88 |
3626BP |
Low Drift INSTRUMENTATION AMPLIFIER |
Burr Brown |
| 89 |
3626CP |
Low Drift INSTRUMENTATION AMPLIFIER |
Burr Brown |
| 90 |
363D |
LM363 Precision Instrumentation Amplifier |
National Semiconductor |
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