| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2N5443 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
| 62 |
2N5444 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
| 63 |
2N5445 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
| 64 |
2N5446 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
| 65 |
2N5551HR |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 66 |
2N5551HRG |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 67 |
2N5551HRT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 68 |
2N5551RHRG |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 69 |
2N5551RHRT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 70 |
2N5551RUBG |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 71 |
2N5551RUBT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 72 |
2N5551SHRT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 73 |
2N5551UB1 |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 74 |
2N5551UBG |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 75 |
2N5551UBT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 76 |
2N5571 |
SILICON BIDIRECTIOANAL TRIODE THYRISTORS |
Motorola |
| 77 |
2N5572 |
SILICON BIDIRECTIOANAL TRIODE THYRISTORS |
Motorola |
| 78 |
2N5573 |
SILICON BIDIRECTIOANAL TRIODE THYRISTORS |
Motorola |
| 79 |
2N5574 |
SILICON BIDIRECTIOANAL TRIODE THYRISTORS |
Motorola |
| 80 |
2N5664SMD |
NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS |
SemeLAB |
| 81 |
2N5681SMD |
100V Vce, 1A Ic, 30MHz NPN bipolar transistor |
SemeLAB |
| 82 |
2N6071 |
Silicon Bidirectional Thyristor 4A 200V |
Motorola |
| 83 |
2N6071-D |
Sensitive Gate Triacs Silicon Bidirectional Thyristors |
ON Semiconductor |
| 84 |
2N6071A |
Silicon Bidirectional Thyristor 4A 200V |
Motorola |
| 85 |
2N6071B |
Silicon Bidirectional Thyristor 4A 200V |
Motorola |
| 86 |
2N6072 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 87 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 88 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 89 |
2N6073 |
Silicon Bidirectional Thyristor 4A 400V |
Motorola |
| 90 |
2N6073 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
Motorola |
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