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Datasheets for N E

Datasheets found :: 17538
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No. Part Name Description Manufacturer
61 02DZ5.1 Diode Silicon Epitaxial Planar Type Reference Voltage Applications TOSHIBA
62 02DZ5.6 Diode Silicon Epitaxial Planar Type Reference Voltage Applications TOSHIBA
63 02DZ6.2 Diode Silicon Epitaxial Planar Type Reference Voltage Applications TOSHIBA
64 02DZ6.8 Diode Silicon Epitaxial Planar Type Reference Voltage Applications TOSHIBA
65 02DZ7.5 Diode Silicon Epitaxial Planar Type Reference Voltage Applications TOSHIBA
66 02DZ8.2 Diode Silicon Epitaxial Planar Type Reference Voltage Applications TOSHIBA
67 02DZ9.1 Diode Silicon Epitaxial Planar Type Reference Voltage Applications TOSHIBA
68 0510-50A 50 W, 28 V, 500-1000 MHz common emitter transistor GHz Technology
69 10A015 1.5 W, 20 V, 1000 MHz common emitter transistor GHz Technology
70 10A030 3 W, 20 V, 1000 MHz common emitter transistor GHz Technology
71 10A060 6 W, 20 V, 1000 MHz common emitter transistor GHz Technology
72 10GL2CZ47A HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE TOSHIBA
73 13003BR NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Microelectronics
74 13003BR NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Microelectronics
75 1314AB60 60 W, 25 V, 1350-1400 MHz common emitter transistor GHz Technology
76 1318 Silicon NPN epitaxial planer type(For low-frequency driver amplification) Panasonic
77 1474 Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz SGS Thomson Microelectronics
78 15C02CH NPN EPITAXIAL SILICON TRANSISTOR SANYO
79 1617AB35 35 W, 25 V, 1600-1700 MHz common emitter transistor GHz Technology
80 1617AB5 5 W, 26 V, 1600-1700 MHz common emitter transistor GHz Technology
81 1617AM10 10 W, 18 V, 1500-1800 MHz common emitter transistor GHz Technology
82 16F84A 18-pin Enhanced Flash/EEPROM 8-Bit Microcontroller Microchip
83 16F876A 28/40-pin Enhanced FLASH Microcontrollers Microchip
84 16F876A 28/40-pin Enhanced FLASH Microcontrollers Microchip
85 1815 Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications) TOSHIBA
86 1819AB12 12 W, 25 V, 1808-1880 MHz common emitter transistor GHz Technology
87 1819AB25 25 W, 25 V, 1808-1880 MHz common emitter transistor GHz Technology
88 1819AB35 35 W, 25 V, 1808-1880 MHz common emitter transistor GHz Technology
89 1819AB4 4 W, 25 V, 1808-1880 MHz common emitter transistor GHz Technology
90 1920A05 5 W, 26 V, 1930-1990 MHz common emitter transistor GHz Technology


Datasheets found :: 17538
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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