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Datasheets for N MEDI

Datasheets found :: 529
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No. Part Name Description Manufacturer
61 2N6038 NPN medium power darlington transistor, 4A , 60V SGS Thomson Microelectronics
62 2N6211 2A silicon medium-power, High-Voltage PNP transistor 35W Motorola
63 2N6212 2A silicon medium-power, High-Voltage PNP transistor 35W Motorola
64 2N6213 2A silicon medium-power, High-Voltage PNP transistor 35W Motorola
65 2N6312 COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS Boca Semiconductor Corporation
66 2N6313 COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS Boca Semiconductor Corporation
67 2N6314 COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS Boca Semiconductor Corporation
68 2N6315 COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS Boca Semiconductor Corporation
69 2N6316 COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS Boca Semiconductor Corporation
70 2N6317 COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS Boca Semiconductor Corporation
71 2N6318 COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS Boca Semiconductor Corporation
72 2N696 Silicon n-p-n medium power transistor Mullard
73 2N697 Silicon n-p-n medium power transistor Mullard
74 2SA17H Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching Hitachi Semiconductor
75 2SA18H Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching Hitachi Semiconductor
76 2SA537AH Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications Hitachi Semiconductor
77 2SA537H Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications Hitachi Semiconductor
78 2SA548H Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching, RF Amplifier Hitachi Semiconductor
79 2SB678 Silicon PNP epitaxial darlington medium power low frequency, medium speed switching transistor TOSHIBA
80 2SB679 Silicon triple diffused darlington medium power low frequency transistor, complementary 2SD689 TOSHIBA
81 2SC282H Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching Hitachi Semiconductor
82 2SC284H Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching Hitachi Semiconductor
83 2SC708AH Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Amplifier, Medium Power Switching Hitachi Semiconductor
84 2SC708H Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Amplifier, Medium Power Switching Hitachi Semiconductor
85 2SC830H Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Output, Medium Power Switching Hitachi Semiconductor
86 2SC89H Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching Hitachi Semiconductor
87 2SC90H Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching Hitachi Semiconductor
88 2SC91H Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching Hitachi Semiconductor
89 2SC984H Silicon NPN Epitaxial LTP transistor, intended for use in Medium Speed Switching and Audio Frequency Small Signal Amplifier Hitachi Semiconductor
90 2SD2114S 20V,0.5A high-current gain medium power transistor ROHM


Datasheets found :: 529
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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