No. |
Part Name |
Description |
Manufacturer |
61 |
2N6038 |
NPN medium power darlington transistor, 4A , 60V |
SGS Thomson Microelectronics |
62 |
2N6211 |
2A silicon medium-power, High-Voltage PNP transistor 35W |
Motorola |
63 |
2N6212 |
2A silicon medium-power, High-Voltage PNP transistor 35W |
Motorola |
64 |
2N6213 |
2A silicon medium-power, High-Voltage PNP transistor 35W |
Motorola |
65 |
2N6312 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
66 |
2N6313 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
67 |
2N6314 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
68 |
2N6315 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
69 |
2N6316 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
70 |
2N6317 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
71 |
2N6318 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
72 |
2N696 |
Silicon n-p-n medium power transistor |
Mullard |
73 |
2N697 |
Silicon n-p-n medium power transistor |
Mullard |
74 |
2SA17H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
75 |
2SA18H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
76 |
2SA537AH |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
77 |
2SA537H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
78 |
2SA548H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching, RF Amplifier |
Hitachi Semiconductor |
79 |
2SB678 |
Silicon PNP epitaxial darlington medium power low frequency, medium speed switching transistor |
TOSHIBA |
80 |
2SB679 |
Silicon triple diffused darlington medium power low frequency transistor, complementary 2SD689 |
TOSHIBA |
81 |
2SC282H |
Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching |
Hitachi Semiconductor |
82 |
2SC284H |
Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching |
Hitachi Semiconductor |
83 |
2SC708AH |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Amplifier, Medium Power Switching |
Hitachi Semiconductor |
84 |
2SC708H |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Amplifier, Medium Power Switching |
Hitachi Semiconductor |
85 |
2SC830H |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Output, Medium Power Switching |
Hitachi Semiconductor |
86 |
2SC89H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
87 |
2SC90H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
88 |
2SC91H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
89 |
2SC984H |
Silicon NPN Epitaxial LTP transistor, intended for use in Medium Speed Switching and Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
90 |
2SD2114S |
20V,0.5A high-current gain medium power transistor |
ROHM |
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