| No. |
Part Name |
Description |
Manufacturer |
| 61 |
ADG749BKS-REEL |
CMOS Low Voltage 2 Ω SPDT Switch in SC70 Package |
Analog Devices |
| 62 |
ADG841 |
0.28 Ω CMOS 1.65 V to 3.6 V Single SPST Switches in SC70 Closed for a Logic 1 Input |
Analog Devices |
| 63 |
ADG842 |
0.28 Ω CMOS 1.65 V to 3.6 V Single SPST Switches in SC70 Open for a Logic 1 Input |
Analog Devices |
| 64 |
ADG849 |
3 V/5 V CMOS 0.5 Ω SPDT Switch in SC70 |
Analog Devices |
| 65 |
ADG849YKSZ-500RL7 |
3 V/5 V CMOS 0.5 Ω SPDT Switch in SC70 |
Analog Devices |
| 66 |
ADG849YKSZ-REEL |
3 V/5 V CMOS 0.5 Ω SPDT Switch in SC70 |
Analog Devices |
| 67 |
ADG849YKSZ-REEL7 |
3 V/5 V CMOS 0.5 Ω SPDT Switch in SC70 |
Analog Devices |
| 68 |
AN1542 |
THE THERMAL RUNAWAY LAW IN SCHOTTKY USED IN OR-ING APPLICATION |
SGS Thomson Microelectronics |
| 69 |
AN582 |
PROTECTION SCHEMATICS FOR TELEPHONE SET |
SGS Thomson Microelectronics |
| 70 |
AN584 |
PROTECTION SCHEMATICS FOR SWITCHING SYSTEM |
SGS Thomson Microelectronics |
| 71 |
ASIBAT38 |
SILICON SCHOTTKY BARRIER DIODE |
Advanced Semiconductor |
| 72 |
ATF-54143 |
ATF-54143 · Single Voltage E-pHEMT Low Noise +36 dBm OIP3 in SC-70 |
Agilent (Hewlett-Packard) |
| 73 |
ATF-55143 |
ATF-55143 · Single Voltage E-pHEMT Low Current Low Noise +24.2dBm OIP3 in SC-70 |
Agilent (Hewlett-Packard) |
| 74 |
ATF-58143 |
ATF-58143 · Single Voltage E-pHEMT Low Noise +30.5 dBm OIP3 in SC-70 |
Agilent (Hewlett-Packard) |
| 75 |
BAS125 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
| 76 |
BAS125-04 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
| 77 |
BAS125-04W |
Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application) |
Siemens |
| 78 |
BAS125-05 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
| 79 |
BAS125-05W |
Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application) |
Siemens |
| 80 |
BAS125-06 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
| 81 |
BAS125-06W |
Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application) |
Siemens |
| 82 |
BAS125-07 |
Silicon Schottky Diode (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications) |
Siemens |
| 83 |
BAS125-07W |
Silicon Schottky Diode (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
| 84 |
BAS125W |
Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application) |
Siemens |
| 85 |
BAS140 |
Silicon Schottky Diode |
Infineon |
| 86 |
BAS140 |
Silicon Schottky Diode (General purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Siemens |
| 87 |
BAS140W |
Silicon Schottky Diode (General purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Siemens |
| 88 |
BAS170 |
Silicon Schottky Diode |
Infineon |
| 89 |
BAS170 |
Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| 90 |
BAS170W |
Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| | | |
