No. |
Part Name |
Description |
Manufacturer |
61 |
BD241 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 55V, 40W. |
General Electric Solid State |
62 |
BD241A |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 40W. |
General Electric Solid State |
63 |
BD241B |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 40W. |
General Electric Solid State |
64 |
BD241C |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 115V, 40W. |
General Electric Solid State |
65 |
BD243 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 55V, 65W. |
General Electric Solid State |
66 |
BD243A |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 65W. |
General Electric Solid State |
67 |
BD243B |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 65W. |
General Electric Solid State |
68 |
BD243C |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 115V, 65W. |
General Electric Solid State |
69 |
BD533 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 45V, 50W. |
General Electric Solid State |
70 |
BD535 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 60V, 50W. |
General Electric Solid State |
71 |
BD537 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 80V, 50W. |
General Electric Solid State |
72 |
BD795 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V, 65W. |
General Electric Solid State |
73 |
BD797 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V, 65W. |
General Electric Solid State |
74 |
BD799 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V, 65W. |
General Electric Solid State |
75 |
BD801 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 100V, 65W. |
General Electric Solid State |
76 |
BUW64A |
HIGH-CURRENT, SILICON N-P-N VERSAWATT TRANSISTORS |
Philips |
77 |
BUW64B |
HIGH-CURRENT, SILICON N-P-N VERSAWATT TRANSISTORS |
Philips |
78 |
BUW64C |
HIGH-CURRENT, SILICON N-P-N VERSAWATT TRANSISTORS |
Philips |
79 |
C505C |
8-Bit Microcontrollers - General Description: The C505C enhances the C500 family of 8-bit Microcontrollers by a new member which provides full CAN version 2.0 B integrated on-chip. The C505C meets the current requirements for increasingly |
Infineon |
80 |
DDRSDRAM |
DDR SDRAM Specification Version 0.61 |
Samsung Electronic |
81 |
DDRSDRAM1111 |
DDR SDRAM Specification Version 1.0 |
Samsung Electronic |
82 |
GT100 |
Silicon NPN Very High Power Darlington Transistor |
IPRS Baneasa |
83 |
GT100/10 |
Silicon NPN Very High Power Darlington Transistor 1000V |
IPRS Baneasa |
84 |
GT100/3 |
Silicon NPN Very High Power Darlington Transistor 300V |
IPRS Baneasa |
85 |
GT100/4 |
Silicon NPN Very High Power Darlington Transistor 400V |
IPRS Baneasa |
86 |
GT100/5 |
Silicon NPN Very High Power Darlington Transistor 500V |
IPRS Baneasa |
87 |
GT100/6 |
Silicon NPN Very High Power Darlington Transistor 600V |
IPRS Baneasa |
88 |
GT100/7 |
Silicon NPN Very High Power Darlington Transistor 700V |
IPRS Baneasa |
89 |
GT100/8 |
Silicon NPN Very High Power Darlington Transistor 800V |
IPRS Baneasa |
90 |
GT100/9 |
Silicon NPN Very High Power Darlington Transistor 900V |
IPRS Baneasa |
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