| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2N4125 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
| 62 |
2N4126 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
| 63 |
2N4400 |
General Purpose NPN Silicon Switching and amplifyng transistor |
ITT Semiconductors |
| 64 |
2N4401 |
General Purpose NPN Silicon Switching and amplifyng transistor |
ITT Semiconductors |
| 65 |
2N4402 |
General Purpose PNP Silicon Switching and amplifyng transistor |
ITT Semiconductors |
| 66 |
2N4403 |
General Purpose PNP Silicon Switching and amplifyng transistor |
ITT Semiconductors |
| 67 |
2N495 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 68 |
2N496 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 69 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 70 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 71 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 72 |
2N5337 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 73 |
2N5338 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 74 |
2N5339 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 75 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
| 76 |
2N6292 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. |
USHA India LTD |
| 77 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
| 78 |
2N6620 |
NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER |
Siemens |
| 79 |
2N699 |
NPN silicon annular transistor designed for medium-current switching and amplifier applications |
Motorola |
| 80 |
2N700 |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 81 |
2N700A |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 82 |
2N718 |
NPN silicon annular Star transistor for medium current switching and amplifier applications |
Motorola |
| 83 |
2N741 |
PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications |
Motorola |
| 84 |
2N741A |
PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications |
Motorola |
| 85 |
2N858 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 86 |
2N859 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 87 |
2N860 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 88 |
2N861 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 89 |
2N862 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 90 |
2N863 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
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