| No. |
Part Name |
Description |
Manufacturer |
| 61 |
184T2 |
200V NPN silicon transistot, diffused mesa |
Comset Semiconductors |
| 62 |
184T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| 63 |
184T2 |
Power NPN transistor - High Voltage |
SESCOSEM |
| 64 |
185T2 |
250V NPN silicon transistot, diffused mesa |
Comset Semiconductors |
| 65 |
185T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| 66 |
1893 |
1.65GHz 10W 28V NPN Silicon RF Transistor designed for MARISAT Applications |
SGS Thomson Microelectronics |
| 67 |
1922-18 |
1.9-2.2GHz 18W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 68 |
1N5158 |
PNPN 4-layer diode, two-terminal, fast switching |
Motorola |
| 69 |
1N5159 |
PNPN 4-layer diode, two-terminal, fast switching |
Motorola |
| 70 |
1N5160 |
PNPN 4-layer diode, two-terminal, fast switching |
Motorola |
| 71 |
2-101NU71 |
Low frequency NPN Germanium Transistor |
Tesla Elektronicke |
| 72 |
2-104NU71 |
Low frequency NPN Germanium Transistor |
Tesla Elektronicke |
| 73 |
2-BC288 |
Pair Silicon planar NPN transistor |
SGS-ATES |
| 74 |
2-GD607 |
Germanium alloy NPN transistor 4W |
Tesla Elektronicke |
| 75 |
2-GD608 |
Germanium alloy NPN transistor 4W |
Tesla Elektronicke |
| 76 |
2-GD609 |
Germanium alloy NPN transistor 4W |
Tesla Elektronicke |
| 77 |
2001 |
2GHz 1W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 78 |
2003 |
2GHz 3W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 79 |
2005 |
2GHz 5W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 80 |
2010 |
2GHz 10W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 81 |
2023-16 |
2.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 82 |
2023-6 |
2.0-2.3GHz 6W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 83 |
20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 84 |
20L15 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 85 |
2100 |
2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 86 |
2223-10 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 87 |
2223-14 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 88 |
2223-18 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 89 |
2223-3 |
2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 90 |
22SC5405 |
Silicon NPN triple diffusion planar type |
Panasonic |
| | | |
