| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2N4196 |
Multi-purpose silicon controlled rectifier suited for industrial, consumer, and military applications |
Motorola |
| 62 |
2N4197 |
Multi-purpose silicon controlled rectifier suited for industrial, consumer, and military applications |
Motorola |
| 63 |
2N4198 |
Multi-purpose silicon controlled rectifier suited for industrial, consumer, and military applications |
Motorola |
| 64 |
2N4441 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
| 65 |
2N4442 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
| 66 |
2N4443 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
| 67 |
2N4444 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
| 68 |
2PG301 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 69 |
2PG302 |
For Insulated Gate Bipolar Transistor |
Panasonic |
| 70 |
2PG303 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 71 |
2PG304 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 72 |
2PG351 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 73 |
2PG352 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 74 |
2PG353 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 75 |
2PG401 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 76 |
2PG402 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 77 |
2SC3355 |
Plastic Mold-Packeged low-noise microwave transistors for consumer microwave, application of 2SC3355 series - Application Note |
NEC |
| 78 |
35125/6 |
Stand-off insulators with threaded terminals |
Vishay |
| 79 |
3540/6 |
Stand-off insulators with threaded terminals |
Vishay |
| 80 |
3N128 |
N-Channel Insulated-Gate Depletion-type Field-Effect Transistor |
Texas Instruments |
| 81 |
3N140 |
Silicon n channel field effect transistor dual insulated GATE FET (Tetrode MOST), |
Mullard |
| 82 |
3N141 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
| 83 |
3N142 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
| 84 |
3N153 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
| 85 |
3N153 |
N-Channel Insulated-Gate Depletion-type Field-Effect Transistor |
Texas Instruments |
| 86 |
3N155 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 87 |
3N155A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 88 |
3N156 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 89 |
3N156A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 90 |
3N157 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
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