| No. |
Part Name |
Description |
Manufacturer |
| 61 |
AQY210LSX |
PhotoMOS relay, GU (general use) type. 1-channel(form A) current limit function. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 62 |
AQY210LSZ |
PhotoMOS relay, GU (general use) type. 1-channel(form A) current limit function. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 63 |
AQY214EH |
PhotoMOS relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 64 |
AQY214EHA |
PhotoMOS relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 65 |
AQY214EHAX |
PhotoMOS relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 66 |
AQY214EHAZ |
PhotoMOS relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 67 |
AQY221N1SX |
PhotoMOS relay, RF (radio frequency). C x R 20 type. AC/DC type. Output rating: load voltage 40 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 68 |
AQY221N1SZ |
PhotoMOS relay, RF (radio frequency). C x R 20 type. AC/DC type. Output rating: load voltage 40 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 69 |
AQY221N2VW |
PhotoMOS relay, RF (radio frequency). C x R 10 type. 1 form A. AC/DC type. Output rating: load voltage 40 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 70 |
AQY221N2VY |
PhotoMOS relay, RF (radio frequency). C x R 10 type. 1 form A. AC/DC type. Output rating: load voltage 40 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 71 |
AQY410SX |
PhotoMOS relay, GU (general use) type, 1-channel (form B). Output rating: load voltage 350 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 72 |
AQY410SZ |
PhotoMOS relay, GU (general use) type, 1-channel (form B). Output rating: load voltage 350 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 73 |
AQY414EH |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 74 |
AQY414EHA |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 75 |
AQY414EHAX |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 76 |
AQY414EHAZ |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 77 |
FDD03-1212D5A |
3 W DC/DC converter,input voltage 18-72 V, output voltage 12/12 V, output current 125/125 mA |
CHINFA Electronics IND |
| 78 |
LT211 |
Photo DMOS-FET relay. Input continuous LED current 50 mA, input peak LED current 1000 mA, input LED reverse voltage 5 V. Output load voltage 350 V, output load current 120 mA. |
Letex Technology |
| 79 |
LT214 |
Photo DMOS-FET relay. Input continuous LED current 50 mA, input peak LED current 1000 mA, input LED reverse voltage 5 V. Output load voltage 80 V, output load current 120 mA. |
Letex Technology |
| 80 |
LT314 |
Photo DMOS-FET relay. Input continuous LED current 50 mA, input peak LED current 1000 mA, input LED reverse voltage 5 V. Output load voltage 80 V, output load current 120 mA. |
Letex Technology |
| 81 |
MAX6505UTP120-T |
Trip point 120, 30 mA, dual trip SOT temperature switch |
MAXIM - Dallas Semiconductor |
| 82 |
MAX6505UTP125-T |
Trip point 125, 30 mA, dual trip SOT temperature switch |
MAXIM - Dallas Semiconductor |
| 83 |
MAX6506UTP120-T |
Trip point 120, 30 mA, dual trip SOT temperature switch |
MAXIM - Dallas Semiconductor |
| 84 |
MAX6506UTP125-T |
Trip point 125, 30 mA, dual trip SOT temperature switch |
MAXIM - Dallas Semiconductor |
| 85 |
MCT-125 |
Magnesium Calcium Titanate - Dielectric Constant 125 - 6.0 GHz |
Skyworks Solutions |
| 86 |
NTE5871 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 12A. |
NTE Electronics |
| 87 |
NTE5872 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 12A. |
NTE Electronics |
| 88 |
NTE5873 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 12A. |
NTE Electronics |
| 89 |
NTE5874 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A. |
NTE Electronics |
| 90 |
NTE5875 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A. |
NTE Electronics |
| | | |
