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Datasheets for NT-

Datasheets found :: 14118
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No. Part Name Description Manufacturer
61 2CL2FM High Voltage Dioes Standard AND Ultra-FAST Recovery HV Component
62 2CL2G High Voltage Dioes Standard AND Ultra-FAST Recovery HV Component
63 2CL2H High Voltage Dioes Standard AND Ultra-FAST Recovery HV Component
64 2CL2J High Voltage Dioes Standard AND Ultra-FAST Recovery HV Component
65 2MBI100NT-120-01 IGBT module Fuji Electric
66 2MBI150NT-120 IGBT module Fuji Electric
67 2MBI150NT-120-01 IGBT module Fuji Electric
68 2MBI150NT-120A IGBT module Fuji Electric
69 2MBI200NT-120-02 IGBT module Fuji Electric
70 2MBI300NT-120-02 IGBT module Fuji Electric
71 2MBI400NT-060-02 IGBT module Fuji Electric
72 2MBI400NT-060-0201 IGBT module Fuji Electric
73 2MBI600NT-060 IGBT(600V 600A) Fuji Electric
74 2N3959 NPN silicon transistor particularly well suited for high-speed current-mode logic switching applications Motorola
75 2N3960 NPN silicon transistor particularly well suited for high-speed current-mode logic switching applications Motorola
76 2N6660 N-Channel Enhancement-Mode Vertical DMOS FETs Supertex Inc
77 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Supertex Inc
78 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
79 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
80 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
81 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
82 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
83 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
84 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
85 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
86 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
87 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
88 2N6781 60 V, 06 ohm, N-channel enhancement-mode D-MOS power FET Topaz Semiconductor
89 2N6782 N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. General Electric Solid State
90 2N6782 100 V, 06 ohm, N-channel enhancement-mode D-MOS power FET Topaz Semiconductor


Datasheets found :: 14118
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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