| No. |
Part Name |
Description |
Manufacturer |
| 61 |
ASM3P2870AF-08TT |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 62 |
ASM3P2872A-06OR |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 63 |
ASM3P2872A-08SR |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 64 |
ASM3P2872A-08ST |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 65 |
ASM3P2872A-08TR |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 66 |
ASM3P2872A-08TT |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 67 |
ASM3P2872AF-06OR |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 68 |
ASM3P2872AF-08SR |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 69 |
ASM3P2872AF-08ST |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 70 |
ASM3P2872AF-08TR |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 71 |
ASM3P2872AF-08TT |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 72 |
ASM3P2879AF-06OR |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 73 |
ASM3P2879AF-08SR |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 74 |
ASM3P2879AF-08ST |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 75 |
ASM3P2879AF-08TR |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 76 |
ASM3P2879AF-08TT |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 77 |
ATR0797 |
65 to 300 MHz SiGe IF receiver/demodulator |
Atmel |
| 78 |
BAY96 |
Silicon planar diode for use in high efficiency multiplier circuits, input powers up to 30W |
Mullard |
| 79 |
BC848A |
hfe min 110 NF max. 10 dB Transistor polarity NPN Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 350 mW |
Fairchild Semiconductor |
| 80 |
BC848C |
hfe min 420 NF max. 10 dB Transistor polarity NPN Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 250 mW |
Fairchild Semiconductor |
| 81 |
BC858C |
hfe min 420 NF max. 10 dB Transistor polarity PNP Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 350 mW |
Fairchild Semiconductor |
| 82 |
BD9015KV-M |
3.9 to 30V, 2ch Synchronous Rectification Step-Down Controller |
ROHM |
| 83 |
BD9015KV-ME2 |
3.9 to 30V, 2ch Synchronous Rectification Step-Down Controller |
ROHM |
| 84 |
BD9016KV-M |
3.9 to 30V, 2ch Synchronous Rectification Step-Down Controller |
ROHM |
| 85 |
BD9016KV-ME2 |
3.9 to 30V, 2ch Synchronous Rectification Step-Down Controller |
ROHM |
| 86 |
BF |
Precision Rotative Transducers, Conductive Plastic, Bushing Mounting, Size 08 to 30, Good Repeatability, Long Life, Essentially Infinite Resolution, Up to 6 Electrical Functions on the Same Shaft |
Vishay |
| 87 |
BF459 |
Transistor polarity NPN Voltage Vceo 300 V Current Ic av. 0.1 A Power Ptot 6 W |
SGS Thomson Microelectronics |
| 88 |
BF543 |
Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications) |
Siemens |
| 89 |
BF550 |
PNP Silicon RF Transistor (For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners) |
Siemens |
| 90 |
BF554 |
NPN Silicon RF Transistor (For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits) |
Siemens |
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