No. |
Part Name |
Description |
Manufacturer |
61 |
2N3839 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz, low noise |
SGS-ATES |
62 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
63 |
2N6986 |
100W 30 to 500MHz controlled Q broadband push-pull RF Power Transistor NPN silicon |
Motorola |
64 |
2SA1235A |
200mW SMD PNP transistor, maximum rating: -50V Vceo, -200mA Ic, 150 to 500 hFE. Improve on 2SA1235 |
Isahaya Electronics Corporation |
65 |
2SA1366 |
150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 |
Isahaya Electronics Corporation |
66 |
2SA1995 |
450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE. |
Isahaya Electronics Corporation |
67 |
2SA1998 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -2A Ic, 150 to 500 hFE. |
Isahaya Electronics Corporation |
68 |
2SB1314 |
2W Lead frame PNP transistor, maximum rating: -60V Vceo, -3A Ic, 150 to 500 hFE. |
Isahaya Electronics Corporation |
69 |
2SC2098 |
Silicon NPN epitaxial planar transistor, Citizen band and HAM band up to 50MHz RF power amplifier applications |
TOSHIBA |
70 |
2SC3242A |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 2A Ic, 150 to 500 hFE. Complementary 2SA1282A |
Isahaya Electronics Corporation |
71 |
2SC3245A |
900mW Lead frame NPN transistor, maximum rating: 150V Vceo, 100mA Ic, 150 to 500 hFE. Complementary 2SA1285A |
Isahaya Electronics Corporation |
72 |
2SC3581 |
900mW Lead frame NPN transistor, maximum rating: 50V Vceo, 400mA Ic, 90 to 500 hFE. Complementary 2SA1399 |
Isahaya Electronics Corporation |
73 |
3B43 |
Isolated AC Sine Wave Input; 0 to 50 V rms Signal Conditioning Module |
Analog Devices |
74 |
3B43-00 |
Isolated AC Sine Wave Input; 0 to 50 V rms Signal Conditioning Module |
Analog Devices |
75 |
3B43-01 |
Isolated AC Sine Wave Input; 0 to 50 V rms Signal Conditioning Module |
Analog Devices |
76 |
3B43-CUSTOM |
Isolated AC Sine Wave Input; 0 to 50 V rms Signal Conditioning Module |
Analog Devices |
77 |
3B44 |
Isolated AC Sine Wave Input; 0 to 550 V rms Signal Conditioning Module |
Analog Devices |
78 |
3B44-00 |
Isolated AC Sine Wave Input; 0 to 550 V rms Signal Conditioning Module |
Analog Devices |
79 |
3B44-01 |
Isolated AC Sine Wave Input; 0 to 550 V rms Signal Conditioning Module |
Analog Devices |
80 |
3B44-02 |
Isolated AC Sine Wave Input; 0 to 550 V rms Signal Conditioning Module |
Analog Devices |
81 |
3B44-CUSTOM |
Isolated AC Sine Wave Input; 0 to 550 V rms Signal Conditioning Module |
Analog Devices |
82 |
3N200 |
MOS Field-Effect Transistor N-Channel Depletion Type, for Military and Industrial Applications up to 500MHz |
RCA Solid State |
83 |
40841 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor from DC to 500MHz |
RCA Solid State |
84 |
54AC164245 |
Rad-Hard 16-bit transceiver, 3.3 to 5 V bidirectional level shifter transceiver |
ST Microelectronics |
85 |
54F384DMQB |
4.5 V to 5.5 V, 8-bit serial/parallel two complement multiplier |
National Semiconductor |
86 |
54F384PMQB |
4.5 V to 5.5 V, 8-bit serial/parallel two complement multiplier |
National Semiconductor |
87 |
54F384SMQB |
4.5 V to 5.5 V, 8-bit serial/parallel two complement multiplier |
National Semiconductor |
88 |
74ALVC164245DGGRE4 |
16-Bit 2.5-V to 3.3-V/3.3-V To 5-V Level Shifting Transceiver With 3-State Outputs 48-TSSOP -40 to 85 |
Texas Instruments |
89 |
74ALVC164245DGGRG4 |
16-Bit 2.5-V to 3.3-V/3.3-V To 5-V Level Shifting Transceiver With 3-State Outputs 48-TSSOP -40 to 85 |
Texas Instruments |
90 |
74ALVC164245DGGTE4 |
16-Bit 2.5-V to 3.3-V/3.3-V To 5-V Level Shifting Transceiver With 3-State Outputs 48-TSSOP -40 to 85 |
Texas Instruments |
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