DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for OLLECTOR C

Datasheets found :: 485
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |
No. Part Name Description Manufacturer
61 BC108A NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 180 SGS Thomson Microelectronics
62 BC108B NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 290 SGS Thomson Microelectronics
63 BC108C NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 520 SGS Thomson Microelectronics
64 BC109B NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 290 SGS Thomson Microelectronics
65 BC109C NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 520 SGS Thomson Microelectronics
66 BC237 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. USHA India LTD
67 BC238 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. USHA India LTD
68 BC239 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. USHA India LTD
69 BC307 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. USHA India LTD
70 BC308 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. USHA India LTD
71 BC309 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. USHA India LTD
72 BC327 PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
73 BC327 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. USHA India LTD
74 BC327-16 PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
75 BC327-25 PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
76 BC327-40 PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
77 BC328 PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
78 BC328-16 PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
79 BC328-25 PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
80 BC328-40 PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
81 BC337 NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
82 BC337 Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Collector-base Vcbo = 50V. Collector-emitter Vceo= 45V. Emitter-base Vebo = 5V. Collector dissipation Pc = 625mW. Collector current USHA India LTD
83 BC337-16 NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
84 BC337-25 NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
85 BC337-40 NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
86 BC338 NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
87 BC338-16 NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
88 BC338-25 NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
89 BC338-40 NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
90 BC368 NPN Silicon AF Transistor (High current gain High collector current) Siemens


Datasheets found :: 485
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



© 2024 - www Datasheet Catalog com