| No. |
Part Name |
Description |
Manufacturer |
| 61 |
MRAL2023-6 |
MICroAMP 22V operation, broadband 2000-2300MHz, gold metalized |
TRW |
| 62 |
MRAL2023-6H |
MICroAMP, 22V operation, Broadband 2000-2300MHz, diffused ballast resistors, gold metalized, 6W |
TRW |
| 63 |
MRAL2023-H-Series |
MICroAMP, 22V operation, Broadband 2000-2300MHz, diffused ballast resistors, gold metalized |
TRW |
| 64 |
NL10276AC28-01L |
36 cm 14.1 inches, 1024 x 768 pixels, Full-color, Multi-scan function, Built-in CRT interface board |
NEC |
| 65 |
NL10276AC30-01 |
38 cm 15 inches, 1024 x 768 pixels, Full-color, Multi-scan Function, Built-in backlight with inverter Ultra wide viewing angle |
NEC |
| 66 |
NL10276AC30-01A |
38 cm 15 inches, 1024 x 768 pixels, Full-color, Multi-scan Function, Built-in backlight with inverter Ultra wide viewing angle |
NEC |
| 67 |
PCF85263AT |
Tiny Real-Time Clock/calendar with alarm function, battery switch-over, time stamp input, and I²C-bus |
NXP Semiconductors |
| 68 |
PCF85263ATL |
Tiny Real-Time Clock/calendar with alarm function, battery switch-over, time stamp input, and I²C-bus |
NXP Semiconductors |
| 69 |
PCF85263ATT |
Tiny Real-Time Clock/calendar with alarm function, battery switch-over, time stamp input, and I²C-bus |
NXP Semiconductors |
| 70 |
PCF85263ATT1 |
Tiny Real-Time Clock/calendar with alarm function, battery switch-over, time stamp input, and I²C-bus |
NXP Semiconductors |
| 71 |
Q62702-A1159 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 72 |
Q62702-A1160 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 73 |
Q62702-A1161 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 74 |
Q62702-A1162 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 75 |
Q62702-A3470 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 76 |
Q62702-A879 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 77 |
Q62702-A961 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 78 |
Q62702-A962 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 79 |
Q62702-A963 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 80 |
Q62702-A964 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 81 |
Q62702-D1316 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
| 82 |
Q62702-D1321 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
| 83 |
Q62702-D1322 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
| 84 |
Q62702-D1323 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
| 85 |
Q62702-D1347 |
Silicon Schottky Diode (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
| 86 |
RF TRANSISTOR DESIGN |
Chip fabrication, basic operation and main parameters, noise, parasitic elements, packaging |
SGS-ATES |
| 87 |
T10A062B |
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 56V,max. Ir = 50uA @ Vr = 62V,max, Bulk (500pcs). |
Littelfuse |
| 88 |
T10A062T |
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 56V,max. Ir = 50uA @ Vr = 62V,max, Tape and reeled (1500pcs). |
Littelfuse |
| 89 |
T10A068B |
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 61V,max. Ir = 50uA @ Vr = 68V,max, Bulk (500pcs). |
Littelfuse |
| 90 |
T10A068T |
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 61V,max. Ir = 50uA @ Vr = 68V,max, Tape and reeled (1500pcs). |
Littelfuse |
| | | |
