| No. |
Part Name |
Description |
Manufacturer |
| 61 |
HVC134 |
Silicon Epitaxial Planar Pin Diode for High Frequency Switching |
Hitachi Semiconductor |
| 62 |
HVC135 |
Silicon Epitaxial Planar Pin Diode for High Frequency Switching |
Hitachi Semiconductor |
| 63 |
HVC136 |
Silicon Epitaxial Planar Pin Diode for High Frequency Switching |
Hitachi Semiconductor |
| 64 |
HVC142 |
Silicon Epitaxial Planar Pin Diode for High Frequency Switching |
Hitachi Semiconductor |
| 65 |
HVD131 |
Silicon Epitaxial Planar Pin Diode for High Frequency Switching |
Hitachi Semiconductor |
| 66 |
HVD132 |
Silicon Epitaxial Planar Pin Diode for High Frequency Switching |
Hitachi Semiconductor |
| 67 |
HVD133 |
Silicon Epitaxial Planar Pin Diode for High Frequency Switching |
Hitachi Semiconductor |
| 68 |
HVD135 |
Silicon Epitaxial Planar Pin Diode for High Frequency Switching |
Hitachi Semiconductor |
| 69 |
HVD136 |
Silicon Epitaxial Planar Pin Diode for High Frequency Switching |
Hitachi Semiconductor |
| 70 |
HVD138 |
Silicon Epitaxial Planar Pin Diode for High Frequency Switching |
Hitachi Semiconductor |
| 71 |
HVD141 |
Silicon Epitaxial Planar Pin Diode for High Frequency Switching |
Hitachi Semiconductor |
| 72 |
HVD142 |
Silicon Epitaxial Planar Pin Diode for High Frequency Switching |
Hitachi Semiconductor |
| 73 |
HVD144 |
Silicon Epitaxial Planar Pin Diode for High Frequency Switching |
Hitachi Semiconductor |
| 74 |
HVM187 |
Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator |
Hitachi Semiconductor |
| 75 |
KPD1203K |
Unbiased for low frequency or biased for high frequency measurement |
etc |
| 76 |
KSC921 |
NPN (FM CONVERTER/ OSCILLATOR HIGH FREQUENCY AMPLIFIER) |
Samsung Electronic |
| 77 |
MD1131 |
NPN silicon annular dual transistor for high frequency oscillator and amplifier applications |
Motorola |
| 78 |
MD1131F |
NPN silicon annular dual transistor for high frequency oscillator and amplifier applications |
Motorola |
| 79 |
NE461M02 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 80 |
NE461M02-T1 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 81 |
NE856M02 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 82 |
NE856M02-T1 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 83 |
NTE108 |
Silicon NPN Transistor High Frequency Amplifier |
NTE Electronics |
| 84 |
NTE2506 |
Silicon NPN Transistor High Frequency Video Driver |
NTE Electronics |
| 85 |
NTE2507 |
Silicon NPN Transistor High Frequency Video Output |
NTE Electronics |
| 86 |
NTE2510 |
Silicon NPNTransistor High Frequency Video Output |
NTE Electronics |
| 87 |
SBA120-18J |
Dual 180 V, 12 A Schottky Barrier Diode for High Frequency Rectification |
ON Semiconductor |
| 88 |
SBR100-10J |
Dual 100 V, 10 A Schottky Barrier Diode for High Frequency Rectification |
ON Semiconductor |
| 89 |
SPW |
Special Purpose, High Frequency Load (Tubes), High Stability and Excellent High Frequency Characteristics, Particularly Suited for High Frequency Applications |
Vishay |
| 90 |
TGF149-100A |
V(drm): 100V; fast switching thyristor. For high frequency power switching applications |
SGS Thomson Microelectronics |
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