No. |
Part Name |
Description |
Manufacturer |
61 |
2N3797 |
Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range |
Motorola |
62 |
2N4248 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
63 |
2N4249 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
64 |
2N4250 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
65 |
2N4250A |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
66 |
2N4264 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
67 |
2N4265 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
68 |
2N5086 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
69 |
2N5087 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
70 |
2N5088 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
71 |
2N5089 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
72 |
2N508A |
PNP Germanium Milliwatt transistor designed for low noise audio and switching applications |
Motorola |
73 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
74 |
2N5431 |
Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits |
Motorola |
75 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
76 |
2N6620 |
NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER |
Siemens |
77 |
2N7014 |
MOSPOWER N-Channel Enhancement Mode Transistor low gate threshold 100V 3.5A |
Siliconix |
78 |
2N929 |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
79 |
2N929 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
80 |
2N929A |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
81 |
2N930 |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
82 |
2N930 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
83 |
2N930A |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
84 |
2SA1221 |
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
NEC |
85 |
2SA1222 |
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
NEC |
86 |
2SA1282 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
87 |
2SA1282A |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
88 |
2SA1316 |
Transistor Silicon PNP Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers |
TOSHIBA |
89 |
2SA1450 |
PNP Epitaxial Planar Silicon Transistor Low-Frequency Driver Applications |
SANYO |
90 |
2SA1530A |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
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