| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2SC3841 |
UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 62 |
2SC4186 |
UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 63 |
2SC4954 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 64 |
2SC4954-T1 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 65 |
2SC4954-T2 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 66 |
2SC4955 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 67 |
2SC4955-T1 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 68 |
2SC4955-T2 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 69 |
2SC5369 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION |
NEC |
| 70 |
2SC5408 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 71 |
2SC5408-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 72 |
2SC5409 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 73 |
2SC5409-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 74 |
2SD1323 |
For midium speed power switching |
Panasonic |
| 75 |
2SD1326 |
Silicon NPN triple diffusion planar type Darlington For midium speed power switching |
Panasonic |
| 76 |
2SD1327 |
Silicon NPN triple diffusion planar type Darlington For midium speed power switching |
Panasonic |
| 77 |
2SK1578 |
N-Channel Junction FET Capacitor Microphone Applications |
SANYO |
| 78 |
2SK2219 |
Capacitor Microphone Applications |
SANYO |
| 79 |
2SK377 |
Capacitor Microphone Applications |
SANYO |
| 80 |
2SK596 |
CAPACITOR MICROPHONE APPLICATIONS |
SANYO |
| 81 |
2SK596A |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
| 82 |
2SK596B |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
| 83 |
2SK596C |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
| 84 |
2SK596D |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
| 85 |
2SK596E |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
| 86 |
3260-810S3 |
3200 SERIES SMT CONNECTORS FOR MICROMINIATURE INTERFACES |
Hirose Electric |
| 87 |
3260-8S1 |
3200 SERIES SMT CONNECTORS FOR MICROMINIATURE INTERFACES |
Hirose Electric |
| 88 |
3260-8S2 |
3200 SERIES SMT CONNECTORS FOR MICROMINIATURE INTERFACES |
Hirose Electric |
| 89 |
3260-8S3 |
3200 SERIES SMT CONNECTORS FOR MICROMINIATURE INTERFACES |
Hirose Electric |
| 90 |
3N200 |
MOS Field-Effect Transistor N-Channel Depletion Type, for Military and Industrial Applications up to 500MHz |
RCA Solid State |
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