| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 62 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 63 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 64 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 65 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 66 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 67 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 68 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 69 |
2B940A |
Silicon PNP epitaxial planar type(For power amplification) |
Panasonic |
| 70 |
2DI200D-100 |
Power transistor module for power switching, AC and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
| 71 |
2DI30Z-100 |
Power transistor module for power switching, AC and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
| 72 |
2DI75Z-100 |
Power transistor module for power switching, Ac and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
| 73 |
2DI75Z-120 |
Power transistor module for power switching, Ac and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
| 74 |
2N2906A |
hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA |
SGS Thomson Microelectronics |
| 75 |
2N2947 |
NPN silicon annular transistor for power amplifier applications to 100MHz |
Motorola |
| 76 |
2N2948 |
NPN silicon annular transistor for power amplifier applications to 100MHz |
Motorola |
| 77 |
2N2949 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-107 case |
Motorola |
| 78 |
2N2950 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-102 case |
Motorola |
| 79 |
2N3055 |
NPN TRANSISTOR FOR POWERFUL AF OUTPUT STAGES |
Siemens |
| 80 |
2N3298 |
NPN silicon transistor for power oscillator applications to 150 MHz |
Motorola |
| 81 |
2N3664 |
NPN silicon transistor for power amplifier and driver applications to 500MHz |
Motorola |
| 82 |
2N4427 |
ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W |
SGS Thomson Microelectronics |
| 83 |
2N4427 |
VHF OSCILLATOR POWER AMPLIFIER |
ST Microelectronics |
| 84 |
2N5884 |
hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
| 85 |
2N918 |
hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W |
SGS Thomson Microelectronics |
| 86 |
2SA1094 |
Silicon PNP epitaxial transistor, for power amplifier applications |
TOSHIBA |
| 87 |
2SA1306B |
1.5 A; 200V; 20W; silicon PNP epitaxial type stransistor. For power amplifier applications, driver stage amplifier applications |
TOSHIBA |
| 88 |
2SA1463 |
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 89 |
2SA1500 |
For power switching |
Panasonic |
| 90 |
2SA1550 |
For power switching |
Panasonic |
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